Tin Acceptor Doping Enhanced Thermoelectric Performance of n-Type Yb Single-Filled Skutterudites via Reduced Electronic Thermal Conductivity

2019 ◽  
Vol 11 (28) ◽  
pp. 25133-25139 ◽  
Author(s):  
Dandan Qin ◽  
Bo Cui ◽  
Li Yin ◽  
Xu Zhao ◽  
Qian Zhang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Acceptor Doping ◽  
Electronic Thermal Conductivity ◽  
Filled Skutterudites

Improving the thermoelectric performance of p-type PbSe via synergistically enhancing the Seebeck coefficient and reducing electronic thermal conductivity

2020 ◽  
Vol 8 (9) ◽  
pp. 4931-4937 ◽  
Author(s):  
Zhiwei Huang ◽  
Dongyang Wang ◽  
Caiyun Li ◽  
Jinfeng Wang ◽  
Guangtao Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Performance ◽  
Seebeck Coefficients ◽  
Electronic Thermal Conductivity ◽  
P Type

CdTe alloying dramatically enhanced the thermoelectric performance of p-type PbSe by enhancing Seebeck coefficients and reducing electronic thermal conductivity.

scholarly journals Electronic Thermal Conductivity and Thermoelectric Performance of PbBi4Te7

2020 ◽  
Vol 36 (3) ◽  
Author(s):  
Tran Van Quang
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Bismuth Telluride ◽  
Density Functional ◽  
Binary Compound ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Relaxation Time Approximation ◽  
Electronic Thermal Conductivity ◽  
Constant Relaxation Time

Bismuth telluride and its related compounds are the state-of-the-art thermoelectric materials operating at room temperature. Bismuth telluride with Pb substituted, PbBi4Te7, has been found to be a new quasi-binary compound with an impressive high power factor. In this work, in the framework of density functional theory, we study the electronic thermal conductivity of the compound by employing the solution of Boltzmann Transport Equation in a constant relaxation-time approximation. The results show that the electronic thermal conductivity drastically increases with the increase of temperature and carrier concentration which have a detrimental effect on the thermoelectric performance. At a particular temperature, the competition between the thermal conductivity, the Seebeck coefficient and the electrical conductivity limits the thermoelectric figure of merit, ZT. The maximum ZT value of about 0.47 occurs at 520 K and at the carrier concentration of 5.0×1019cm-3 for n-type doping. This suggests that to maximize the thermoelectric performance of the compound, the carrier concentration must be carefully controlled and optimized whereas the best operating temperature is around 500 K.

Low thermal conductivity and enhanced thermoelectric performance of Gd-filled skutterudites

2011 ◽  
Vol 109 (2) ◽  
pp. 023719 ◽  
Author(s):  
Ruiheng Liu ◽  
Xihong Chen ◽  
Pengfei Qiu ◽  
Jinfeng Liu ◽  
Jiong Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Filled Skutterudites

An approach of enhancing thermoelectric performance for p-type PbS: Decreasing electronic thermal conductivity

2020 ◽  
Vol 820 ◽  
pp. 153453 ◽  
Author(s):  
Yongxin Qin ◽  
Yu Xiao ◽  
Dongyang Wang ◽  
Bingchao Qin ◽  
Zhiwei Huang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Electronic Thermal Conductivity ◽  
P Type

scholarly journals Quantitative nanoscale mapping of three-phase thermal conductivities in filled skutterudites via scanning thermal microscopy

2017 ◽  
Vol 5 (1) ◽  
pp. 59-69 ◽  
Author(s):  
Ehsan Nasr Esfahani ◽  
Feiyue Ma ◽  
Shanyu Wang ◽  
Yun Ou ◽  
Jihui Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Phase Interface ◽  
Close Correlation ◽  
Thermoelectric Performance ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Three Phase ◽  
Wide Range ◽  
Filled Skutterudites ◽  
Thermal Conductivities

Abstract In the last two decades, a nanostructuring paradigm has been successfully applied in a wide range of thermoelectric materials, resulting in significant reduction in thermal conductivity and superior thermoelectric performance. These advances, however, have been accomplished without directly investigating the local thermoelectric properties, even though local electric current can be mapped with high spatial resolution. In fact, there still lacks an effective method that links the macroscopic thermoelectric performance to the local microstructures and properties. Here, we show that local thermal conductivity can be mapped quantitatively with good accuracy, nanometer resolution and one-to-one correspondence to the microstructure using a three-phase skutterudite as a model system. Scanning thermal microscopy combined with finite element simulations demonstrate close correlation between sample conductivity and probe resistance, enabling us to distinguish thermal conductivities spanning orders of magnitude, yet resolving thermal variation across a phase interface with small contrast. The technique thus provides a powerful tool to correlate local thermal conductivities, microstructures and macroscopic properties for nanostructured materials in general and nanostructured thermoelectrics in particular.

scholarly journals Enhanced Thermoelectric Performance of Polycrystalline Si0.8Ge0.2 Alloys through the Addition of Nanoscale Porosity

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2591
Author(s):  
S. Aria Hosseini ◽  
Giuseppe Romano ◽  
P. Alex Greaney
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Mean Free Path ◽  
Phonon Transport ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Nanoscale Structures ◽  
Electronic Thermal Conductivity ◽  
Significant Performance

Engineering materials to include nanoscale porosity or other nanoscale structures has become a well-established strategy for enhancing the thermoelectric performance of dielectrics. However, the approach is only considered beneficial for materials where the intrinsic phonon mean-free path is much longer than that of the charge carriers. As such, the approach would not be expected to provide significant performance gains in polycrystalline semiconducting alloys, such as SixGe1-x, where mass disorder and grains provide strong phonon scattering. In this manuscript, we demonstrate that the addition of nanoscale porosity to even ultrafine-grained Si0.8Ge0.2 may be worthwhile. The semiclassical Boltzmann transport equation was used to model electrical and phonon transport in polycrystalline Si0.8Ge0.2 containing prismatic pores perpendicular to the transport current. The models are free of tuning parameters and were validated against experimental data. The models reveal that a combination of pores and grain boundaries suppresses phonon conductivity to a magnitude comparable with the electronic thermal conductivity. In this regime, ZT can be further enhanced by reducing carrier concentration to the electrical and electronic thermal conductivity and simultaneously increasing thermopower. Although increases in ZT are modest, the optimal carrier concentration is significantly lowered, meaning semiconductors need not be so strongly supersaturated with dopants.

Enhanced thermoelectric performance of band structure engineered GeSe1−xTex alloys

2021 ◽  
Vol 5 (6) ◽  
pp. 1734-1746
Author(s):  
D. Sidharth ◽  
A. S. Alagar Nedunchezhian ◽  
R. Akilan ◽  
Anup Srivastava ◽  
Bhuvanesh Srinivasan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Structure ◽  
Power Factor ◽  
Thermoelectric Performance

The power factor of GeSe enhanced and thermal conductivity decreased by Te substitution and thereby, GeSe0.80Te0.20 exhibits high ZT.

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