Light Element Doping and Introducing Spin Entropy: An Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO

2019 ◽  
Vol 11 (17) ◽  
pp. 15543-15551 ◽  
Author(s):  
Jun Tang ◽  
Rui Xu ◽  
Jian Zhang ◽  
Di Li ◽  
Weiping Zhou ◽  
...  
2021 ◽  
Author(s):  
Lijun Zhao ◽  
Mingyuan Wang ◽  
Jian Yang ◽  
Jiabin Hu ◽  
Yuan Zhu ◽  
...  

Abstract Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally-friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1 − xBixSe4 (x = 0-0.04) samples were fabricated through melting and hot pressing (HP) process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2 − xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWcm− 1K− 2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm− 1K− 1 and thermal conductivity (κtot) of ~ 0.62 Wm− 1K− 1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times more than that of pristine Cu3SbSe4. This work shows that isovalent heavy-element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.


2019 ◽  
Vol 793 ◽  
pp. 179-184 ◽  
Author(s):  
Mian Liu ◽  
Kun Xu ◽  
Xiaoying Qin ◽  
Changsong Liu ◽  
Zhe Li

2018 ◽  
Vol 783 ◽  
pp. 144-147
Author(s):  
Jing Wang ◽  
Qin Chen ◽  
Xia Chun Zhu ◽  
Seok Je Lee ◽  
Kyoung Woo Park ◽  
...  

Polycrystalline Ca3-xBixCo4O9 samples have been prepared by solid-phase reaction followed by spark plasma sintering process. The thermoelectric properties have been systematically investigated from room temperature to near 1000K. It is found that the change of the carrier concentration leads to the change of resistivity, which is mainly associated with doping induced point defect phonon scattering. The change of the thermal potential mainly comes from the spin entropy. In addition, polycrystalline Ca3-xBixCo4O9 had a maximum figure of merit of 0.30 at 973 K, which was about 50% higher than Ca3Co4O9. It indicated that doping approach can effectively improve the thermoelectric performance of Ca3Co4O9+δ-based material.


2019 ◽  
Vol 31 (20) ◽  
pp. 8543-8550 ◽  
Author(s):  
Teck Lip Dexter Tam ◽  
Chee Koon Ng ◽  
Siew Lay Lim ◽  
Erol Yildirim ◽  
Jieun Ko ◽  
...  

2019 ◽  
Vol 45 (14) ◽  
pp. 17723-17728 ◽  
Author(s):  
Mengmeng Fan ◽  
Yuewen Zhang ◽  
Qiujun Hu ◽  
Yan Zhang ◽  
Xin-Jian Li ◽  
...  

2017 ◽  
Vol 4 (3) ◽  
pp. 424-432 ◽  
Author(s):  
Tristan Barbier ◽  
David Berthebaud ◽  
Raymond Frésard ◽  
Oleg I. Lebedev ◽  
Emmanuel Guilmeau ◽  
...  

An effective strategy to enhance thermoelectric performance consists of scattering phonons by point defects, such as the ones intrinsic to the n-type isocubanite CuFe2S3.


2020 ◽  
Vol 46 (5) ◽  
pp. 6899-6905 ◽  
Author(s):  
Chuangchuang Ruan ◽  
Mengmeng Fan ◽  
Yuewen Zhang ◽  
Hongzhang Song ◽  
Xin-Jian Li ◽  
...  

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