Silicon-Based Embedded Trenches of Active Antennas for High-Responsivity Omnidirectional Photodetection at Telecommunication Wavelengths

2019 ◽  
Vol 11 (3) ◽  
pp. 3150-3159 ◽  
Author(s):  
Keng-Te Lin ◽  
Chih-Jie Chan ◽  
Yu-Sheng Lai ◽  
Lung-Tai Shiu ◽  
Ching-Che Lin ◽  
...  
Keyword(s):  
High Responsivity ◽  
Active Antennas ◽  
Silicon Based

Densely Arrayed Active Antennas Embedded in Vertical Nanoholes for Backside‐Illuminated Silicon‐Based Broadband Infrared Photodetection

2020 ◽  
Vol 7 (21) ◽  
pp. 2001039
Author(s):  
Shun Yasunaga ◽  
Hidetoshi Takahashi ◽  
Tomoyuki Takahata ◽  
Isao Shimoyama ◽  
Tetsuo Kan
Keyword(s):  
Active Antennas ◽  
Infrared Photodetection ◽  
Silicon Based ◽  
Backside Illuminated

Proton effects on low noise and high responsivity silicon-based photodiodes for space environment

2009 ◽  
Vol 105 (2) ◽  
pp. 024513 ◽  
Author(s):  
Guillaume Pedroza ◽  
Olivier Gilard ◽  
Marie-Lise Bourqui ◽  
Laurent Bechou ◽  
Yannick Deshayes ◽  
...  
Keyword(s):  
Low Noise ◽  
Space Environment ◽  
High Responsivity ◽  
Silicon Based

scholarly journals High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

2020 ◽  
pp. 16-19
Author(s):  
M. S. Kukurudziak ◽  
O. P. Andreeva ◽  
V. M. Lipka
Keyword(s):  
High Resistance ◽  
High Resistivity ◽  
High Responsivity ◽  
Type Silicon ◽  
Optimal Material ◽  
P Type ◽  
Silicon Based

The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.

Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base

2020 ◽  
Vol 45 (5) ◽  
pp. 1088 ◽  
Author(s):  
Wei-Ting Hung ◽  
Devesh Barshilia ◽  
Rikmantra Basu ◽  
H. H. Cheng ◽  
Guo-En Chang
Keyword(s):  
Short Wave ◽  
High Responsivity ◽  
Floating Base ◽  
Short Wave Infrared ◽  
Silicon Based

Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure

2021 ◽  
Vol 9 (10) ◽  
pp. 3504-3512
Author(s):  
Ji Eun Kim ◽  
Won Tae Kang ◽  
Van Tu Vu ◽  
Young Rae Kim ◽  
Yong Seon Shin ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Contact Interface ◽  
High Responsivity ◽  
Tight Contact ◽  
Specific Detectivity ◽  
Silicon Based ◽  
Lateral Heterostructure

As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

Transmit/Receive (T/R) Modules – Key Elements for Phased Array Antennas

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000054-000058
Author(s):  
Martin Oppermann ◽  
Joerg Schroth ◽  
Felix Thurow
Keyword(s):  
Cost Effective ◽  
Low Noise ◽  
High Yield ◽  
Power Devices ◽  
Active Components ◽  
High Power Amplifier ◽  
Active Antennas ◽  
Noise Amplifier ◽  
Thermal Simulations ◽  
Silicon Based

Modern Active Electronically Steered Antennas (AESA) are operating in different platforms and systems. Inside EADS/CASSIDIAN the focus on X-Band antennas today is in airborne and fighter nose radars, in satellite based SAR antennas (Synthetic Aperture Radar) for earth observation and ground surveillance and security radars. Active antennas are assembled with hundreds or even thousands of T/R modules. This paper will describe an example of a so called standardized module solution based on LTCC package technology. State-of-the-art modules are assembled with active components like MMICs realized in GaAs technology, e.g. Low Noise Amplifier (LNA) and High Power Amplifier (HPA), Silicon based devices and passives. Assembly technologies are optimized for high yield series production inside CASSIDIAN MicroWave Factory. New semiconductor technologies, like GaN (Gallium Nitride) are enablers for a new T/R module generation. GaN/SiC based MMICs with higher power density compared with GaAs based devices are technological challenges for innovative thermal management solutions and assembly alternatives. GaN power devices are soldered on modern heatsink materials with high thermal conductivity and matched CTE (between MMIC and heatsink). Results of thermal simulations comparing different heatsink materials in combination with soldering techniques will be discussed and an optimized solution will be shown. Another type of T/R Module technology based on RF-PCB and packaged MMICs will be discussed. Future applications of ground-based security radars, active antenna products with a one-dimensional array and needs for cost-effective solutions seem to be SMD-based products. Different packages, e.g. QFN (Quad Flat Pack no Lead) and ceramic based (HTCC), mainly for power devices will be shown and compared.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Sign in / Sign up

Export Citation Format

Share Document