High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

2018 ◽  
Vol 10 (26) ◽  
pp. 22419-22426 ◽  
Author(s):  
Richeng Lin ◽  
Wei Zheng ◽  
Dan Zhang ◽  
Zhaojun Zhang ◽  
Qixian Liao ◽  
...  
Keyword(s):  
High Performance ◽  
Hot Electron ◽  
Ultraviolet Photodetector ◽  
Carrier Multiplication ◽  
Excited Carrier ◽  
Deep Ultraviolet

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

scholarly journals High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Menghan Jia ◽  
Fang Wang ◽  
Libin Tang ◽  
Jinzhong Xiang ◽  
Kar Seng Teng ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Deep Ultraviolet

High-Performance Solar-Blind Deep Ultraviolet Photodetector Based on Individual Single-Crystalline Zn2GeO4Nanowire

2015 ◽  
Vol 26 (5) ◽  
pp. 704-712 ◽  
Author(s):  
Xing Zhou ◽  
Qi Zhang ◽  
Lin Gan ◽  
Xin Li ◽  
Huiqiao Li ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Single Crystalline ◽  
Solar Blind ◽  
Deep Ultraviolet

High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

2017 ◽  
Vol 41 (12) ◽  
pp. 4901-4907 ◽  
Author(s):  
Hai Zhou ◽  
Pengbin Gui ◽  
Lu Yang ◽  
Cong Ye ◽  
Mengni Xue ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Self Powered

A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W−1 at 300 nm.

Sign in / Sign up

Export Citation Format

Share Document