Tunable Polarity Behavior and High-Performance Photosensitive Characteristics in Schottky-Barrier Field-Effect Transistors Based on Multilayer WS2

2018 ◽  
Vol 10 (3) ◽  
pp. 2745-2751 ◽  
Author(s):  
Yibin Yang ◽  
Le Huang ◽  
Ye Xiao ◽  
Yongtao Li ◽  
Yu Zhao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

High-Performance Schottky-Barrier Field-Effect Transistors Based on Monolayer SiC Contacting Different Metals

2019 ◽  
Vol 66 (12) ◽  
pp. 5111-5116 ◽  
Author(s):  
Hai-Qing Xie ◽  
Jie-Ying Li ◽  
Gang Liu ◽  
Xi-Ya Cai ◽  
Zhi-Qiang Fan
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21750-21756
Author(s):  
Zhi-Qiang Fan ◽  
Zhen-Hua Zhang ◽  
Shen-Yuan Yang
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Metallic Phase ◽  
Transfer Characteristics

Transfer characteristics and benchmarks of 5.1 nm double-gated SBFETs consisting of IP heterojunctions of the metallic-phase MTe2 (M = Ti, Zr, Hf, Cr, Mo, W) and semiconducting-phase WSe2, WTe2 and Janus WSeTe are studied in this paper.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Field-Effect Transistors: Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors (Adv. Mater. 34/2012)

2012 ◽  
Vol 24 (34) ◽  
pp. 4589-4589 ◽  
Author(s):  
Huajie Chen ◽  
Yunlong Guo ◽  
Gui Yu ◽  
Yan Zhao ◽  
Ji Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

Plastic Electronics: The Influence of Morphology on High-Performance Polymer Field-Effect Transistors (Adv. Mater. 2/2009)

2009 ◽  
Vol 21 (2) ◽  
pp. NA-NA ◽  
Author(s):  
Hoi Nok Tsao ◽  
Don Cho ◽  
Jens Wenzel Andreasen ◽  
Ali Rouhanipour ◽  
Dag W. Breiby ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Plastic Electronics ◽  
High Performance Polymer
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