Combustion Synthesis of p-Type Transparent Conducting CuCrO2+x and Cu:CrOx Thin Films at 180 °C

2018 ◽  
Vol 10 (4) ◽  
pp. 3732-3738 ◽  
Author(s):  
Jian Wang ◽  
Trey B. Daunis ◽  
Lanxia Cheng ◽  
Bo Zhang ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Combustion Synthesis ◽  
Transparent Conducting ◽  
P Type

Electrical conductivity tuning in p-type transparent conducting AgGaO2 and in quaternary AgInGaO2 thin films

2020 ◽  
Vol 242 ◽  
pp. 122506 ◽  
Author(s):  
Keerthi K ◽  
Hilal Rahman ◽  
Rajani Jacob ◽  
Benoy M. D ◽  
Rachel Reena Philip
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Transparent Conducting ◽  
P Type

scholarly journals Solution Combustion Synthesis of Transparent Conducting Thin Films for Sustainable Photovoltaic Applications

2020 ◽  
Vol 12 (24) ◽  
pp. 10423 ◽  
Author(s):  
Sana Ullah ◽  
Rita Branquinho ◽  
Tiago Mateus ◽  
Rodrigo Martins ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Solar Cell ◽  
Combustion Synthesis ◽  
Solution Combustion Synthesis ◽  
Wide Band ◽  
Optical Transmittance ◽  
Solution Combustion ◽  
Solution Processed ◽  
Transparent Conducting

Sunlight is arguably the most promising continuous and cheap alternative sustainable energy source available at almost all living places of the human world. Photovoltaics (PV) is a process of direct conversion of sunlight into electricity and has become a technology of choice for sustainable production of cleaner and safer energy. The solar cell is the main component of any PV technology and transparent conducting oxides (TCO) comprising wide band gap semiconductors are an essential component of every PV technology. In this research, transparent conducting thin films were prepared by solution combustion synthesis of metal oxide nitrates wherein the use of indium is substituted or reduced. Individual 0.5 M indium, gallium and zinc oxide source solutions were mixed in ratios of 1:9 and 9:1 to obtain precursor solutions. Indium-rich IZO (A1), zinc-rich IZO (B1), gallium-rich GZO (C1) and zinc-rich GZO (D1) thin films were prepared through spin coating deposition. In the case of A1 and B1 thin films, electrical resistivity obtained was 3.4 × 10−3 Ω-cm and 7.9 × 10−3 Ω-cm, respectively. While C1 films remained insulating, D1 films showed an electrical resistivity of 1.3 × 10−2 Ω-cm. The optical transmittance remained more than 80% in visible for all films. Films with necessary transparent conducting properties were applied in an all solution-processed solar cell device and then characterized. The efficiency of 1.66%, 2.17%, and 0.77% was obtained for A1, B1, and D1 TCOs, respectively, while 6.88% was obtained using commercial fluorine doped SnO2: (FTO) TCO. The results are encouraging for the preparation of indium-free TCOs towards solution-processed thin-film photovoltaic devices. It is also observed that better filtration of precursor solutions and improving surface roughness would further reduce sheet resistance and improve solar cell efficiency.

Transparent conducting p-type thin films of c-axis self-oriented Bi2Sr2Co2Oy with high figure of merit

2014 ◽  
Vol 50 (68) ◽  
pp. 9697-9699 ◽  
Author(s):  
Renhuai Wei ◽  
Xianwu Tang ◽  
Ling Hu ◽  
Zhenzhen Hui ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Figure Of Merit ◽  
Solution Method ◽  
Transparent Conducting ◽  
High Figure ◽  
P Type

Transparent conducting p-type Bi2Sr2Co2Oy thin films show c-axis self-orientation with high figure of merit by a solution method.

Low-temperature combustion synthesis and UV treatment processed p-type Li:NiOx active semiconductors for high-performance electronics

2018 ◽  
Vol 6 (46) ◽  
pp. 12584-12591 ◽  
Author(s):  
Jun Yang ◽  
Bowen Wang ◽  
Yongpeng Zhang ◽  
Xingwei Ding ◽  
Jianhua Zhang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Combustion Synthesis ◽  
High Performance ◽  
Low Temperature Combustion ◽  
Uv Treatment ◽  
Temperature Combustion ◽  
P Type

The p-type Li:NiOx thin films were successfully fabricated through the SUV route at 150 °C.

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

2014 ◽  
Vol 118 (40) ◽  
pp. 23226-23232 ◽  
Author(s):  
Rajani K Vijayaraghavan ◽  
Anthony P. McCoy ◽  
Lalit Chauhan ◽  
Aidan Cowley ◽  
Richard J. H. Morris ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Plasma ◽  
Growth Structure ◽  
Transparent Conducting ◽  
Structure Morphology ◽  
P Type

CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transparent Conducting ◽  
Potential Applications ◽  
Metal Organic ◽  
Hall Effect Measurements ◽  
Organic Precursors ◽  
P Type

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.

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