Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene

2017 ◽  
Vol 9 (39) ◽  
pp. 34050-34056 ◽  
Author(s):  
Mengmeng Xiao ◽  
Chenguang Qiu ◽  
Zhiyong Zhang ◽  
Lian-Mao Peng
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hfo2 Film ◽  
Layer Deposition

Hysteresis-free HfO2 film grown by atomic layer deposition at low temperature

2011 ◽  
Vol 519 (22) ◽  
pp. 7723-7726 ◽  
Author(s):  
J. Shen ◽  
C.Y. Zhang ◽  
T.T. Xu ◽  
A.N. Jiang ◽  
Z.Y. Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Hfo2 Film ◽  
Layer Deposition

Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

2019 ◽  
Vol 11 (7) ◽  
pp. 61-66 ◽  
Author(s):  
In-Sung Park ◽  
Jooho Lee ◽  
Seungki Yoon ◽  
Keum Jee Jung ◽  
Sunwoo Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Hfo2 Film ◽  
Layer Deposition ◽  
Switching Characteristics ◽  
Oxidant Effect

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Harry Alles ◽  
Jaan Aarik ◽  
Aleks Aidla ◽  
Aurelien Fay ◽  
Jekaterina Kozlova ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Dirac Point ◽  
Thick Films ◽  
Atomic Layer ◽  
Deposition Process ◽  
Initial Growth ◽  
Biaxial Strain ◽  
Hfo2 Film ◽  
Layer Deposition ◽  
Spectroscopy Studies

AbstractAtomic layer deposition of HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180°C. HfO2 was also deposited in a two-step temperature process where the initial growth of about 1 nm at 170°C was continued up to 10–30 nm at 300°C. This process yielded uniform, monoclinic HfO2 films with RMS roughness of 1.7 nm for 10–12 nm thick films and 2.5 nm for 30 nm thick films. Raman spectroscopy studies revealed that the deposition process caused compressive biaxial strain in graphene, whereas no extra defects were generated. An 11 nm thick HfO2 film deposited onto bilayer graphene reduced the electron mobility by less than 10% at the Dirac point and by 30–40% far away from it.

ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION

2011 ◽  
Vol 01 (03) ◽  
pp. 369-377 ◽  
Author(s):  
DAN XIE ◽  
TINGTING FENG ◽  
YAFENG LUO ◽  
XUEGUANG HAN ◽  
TIANLING REN ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Hysteresis Loops ◽  
Atomic Layer ◽  
Hfo2 Film ◽  
Layer Deposition ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Different Thickness ◽  
Organic Decomposition

Neodymium and manganese-doped BiFeO3 — (Bi0.95Nd0.05)(Fe0.95Mn0.05)O3(BNFMO) ferroelectric film and HfO2 layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition (ALD) method, respectively. Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 200 nm thick BNFMO and 5 nm thick HfO2 layer on silicon substrate have been prepared and characterized. It is found that there is no distinct interdiffusion and reaction occurring at the interface between BNFMO/HfO2 and HfO2/Si . The capacitance–voltage (C–V) and leakage current properties of Pt/HfO2/Si capacitors with different HfO2 thickness were studied. The MFIS structure showed clockwise C–V hysteresis loops due to the ferroelectric polarization of BNFMO . The maximum memory window is 5 V. The leakage current of the Pt/BNFMO/HfO2/Si capacitor was about 2.1 × 10-6 A/cm2 at an applied voltage of 4 V.

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