Resistive Switching and the Local Electric Field in Bi0.85-xPr0.15RExFe0.97Mn0.03O3/CuFe2O4 (RE = Sr, Dy) Bilayered Thin Films

2017 ◽  
Vol 9 (23) ◽  
pp. 20205-20212 ◽  
Author(s):  
Zhongwei Yue ◽  
Guoqiang Tan ◽  
Huijun Ren ◽  
Ao Xia ◽  
Dan Shao ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Resistive Switching ◽  
Local Electric Field

Electric field-driven resistive switching in magnetoresistive La0.5Ca0.5MnO3 thin films

2004 ◽  
Vol 354 (1-4) ◽  
pp. 11-15 ◽  
Author(s):  
S. Duhalde ◽  
M. Villafuerte ◽  
G. Juárez ◽  
S.P. Heluani
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Resistive Switching

Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films

2019 ◽  
Vol 21 (17) ◽  
pp. 8843-8848 ◽  
Author(s):  
Jamal Shaibo ◽  
Rui Yang ◽  
Zhe Wang ◽  
He-Ming Huang ◽  
Jue Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Bond Length ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Electrical Field ◽  
External Electrical Field ◽  
Field Control

Resistive switching and magnetization in epitaxial LaBaCo2O5+δ films can be controlled through an external electrical field, and the switching is related to the tuning of oxygen vacancies and the Co–O–Co bond length.

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Improved Resistive Switching Properties of Solution Processed TiO[sub 2] Thin Films

2010 ◽  
Vol 13 (12) ◽  
pp. H443 ◽  
Author(s):  
Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
El Mostafa Bourim ◽  
Insung Kim ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Solution Processed
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