Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications

2017 ◽  
Vol 9 (16) ◽  
pp. 14058-14066 ◽  
Author(s):  
Gyu Ri Hong ◽  
Sun Sook Lee ◽  
Hye Jin Park ◽  
Yejin Jo ◽  
Ju Young Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Solution Processed ◽  
Oxide Semiconductors

Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer

2014 ◽  
Vol 174 ◽  
pp. 383-398 ◽  
Author(s):  
Mandeep Singh ◽  
Gerardo Palazzo ◽  
Giuseppe Romanazzi ◽  
Gian Paolo Suranna ◽  
Nicoletta Ditaranto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Dissolution Kinetics ◽  
Liquid Electrolyte ◽  
Electrical Performance ◽  
Zno Films ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Physiological Fluid ◽  
Operation Stability

Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na+ doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in “transient” implantable systems.

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Fully transparent conformal organic thin-film transistor array and its application as LED front driving

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Grid Electrode ◽  
Metal Grid ◽  
Effect Transistor

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.

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