Origin of Photovoltage Enhancement via Interfacial Modification with Silver Nanoparticles Embedded in an a-SiC:H p-Type Layer in a-Si:H Solar Cells

2017 ◽  
Vol 9 (12) ◽  
pp. 11184-11192 ◽  
Author(s):  
Tiantian Li ◽  
Qixing Zhang ◽  
Jian Ni ◽  
Qian Huang ◽  
Dekun Zhang ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Solar Cells ◽  
Interfacial Modification ◽  
Type Layer ◽  
P Type

scholarly journals Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer

2017 ◽  
Vol 110 (10) ◽  
pp. 103904 ◽  
Author(s):  
Mark J. Speirs ◽  
Daniel M. Balazs ◽  
Dmitry N. Dirin ◽  
Maksym V. Kovalenko ◽  
Maria Antonietta Loi
Keyword(s):  
Solar Cells ◽  
Pn Junction ◽  
Type Layer ◽  
P Type

Synthesis of visible-light-absorptive and hole-transporting periodic mesoporous organosilica thin films for organic solar cells

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Visible Light ◽  
Organic Solar Cells ◽  
Mesoporous Films ◽  
Periodic Mesoporous Organosilica ◽  
Mesoporous Organosilica ◽  
Type Layer ◽  
Hole Transporting ◽  
P Type

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

Critical Electric Field of InGaN p-i-n Solar Cell

2013 ◽  
Vol 284-287 ◽  
pp. 1168-1172
Author(s):  
Der Yuh Lin ◽  
Chao Yu Chi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
High Efficiency ◽  
Physical Models ◽  
Electric Field Effect ◽  
Type Layer ◽  
P Type

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

scholarly journals Numerical simulation for optimization of ultra-thin n-type AZO and TiO2 based textured p-type c-Si Heterojunction Solar Cells

2021 ◽  
Author(s):  
Chandan Yadav ◽  
sushil kumar
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Simulation Software ◽  
Heterojunction Solar Cell ◽  
Maximum Efficiency ◽  
Heterojunction Solar Cells ◽  
Type Layer ◽  
P Type

Abstract A maximum efficiency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained efficiency signifying a lot of improvements can be performed to improve efficiency of TiO2/Si and AZO/Si heterojunction solar cell. AZO layer and TiO2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO2/Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum efficiency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and efficient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

Boron-carbide p-type layer for amorphous silicon solar cells

1996 ◽  
Author(s):  
Yasuhiro Matsumoto ◽  
René Asomoza ◽  
Gustavo Hirata ◽  
Leonel Cota-Araiza
Keyword(s):  
Solar Cells ◽  
Boron Carbide ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Type Layer ◽  
P Type

Optimizing CdTe–metal interfaces for high performance solar cells

2017 ◽  
Vol 5 (15) ◽  
pp. 7118-7124 ◽  
Author(s):  
Sibai Li ◽  
Zhi Peng ◽  
Jiaxin Zheng ◽  
Feng Pan
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Type Layer ◽  
Metal Interfaces ◽  
P Type ◽  
Metal Back

CdTe is widely applied in thin film solar cells as a p-type layer, which is usually in contact with a metal back electrode.

Defect and Band Gap Engineering of Amorphous Silicon Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
R.E.I. Schropp ◽  
J.Daey Ouwens ◽  
M.B. Von Der Linden ◽  
C.H.M. Von Der Werf ◽  
W.F. Van Der Weg ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Wide Band ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Antireflective Coatings ◽  
Type Layer ◽  
Back Reflectors ◽  
P Type

This paper demonstrates that the incorporation of an unoptimized, wide band gap a-SiC:H layer near the p-type emitter layer in addition to a graded bandgap ”buffer” layer, leads to improved fill factors and open circuit voltages, in spite of the increased number of recombination sites at the p/i heterojunction. The as deposited as a function of a-SiC:H thickness shows an optimum of 10.5 % at a thickness of 10 – 20 Å. We have further improved this type of cell by incorporating a reverse carbon graded p-type layer and have thus achieved efficiencies in excess of 11.0 %. The cells are all amorphous and do not comprise antireflective coatings or enhanced back reflectors. A new defect engineering scheme to accomplish enhanced stabilized efficiencies of amorphous silicon solar cells is also proposed here.

Sign in / Sign up

Export Citation Format

Share Document