Tailoring Nucleation at Two Interfaces Enables Single Crystalline NiO Nanowires via Vapor–Liquid–Solid Route

2016 ◽  
Vol 8 (41) ◽  
pp. 27892-27899 ◽  
Author(s):  
Kazuki Nagashima ◽  
Hideto Yoshida ◽  
Annop Klamchuen ◽  
Masaki Kanai ◽  
Gang Meng ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
Single Crystalline ◽  
Vapor Liquid

Shape-Controlled Synthesis of Single-Crystalline Nanopillar Arrays by Template-Assisted Vapor−Liquid−Solid Process

2010 ◽  
Vol 132 (40) ◽  
pp. 13972-13974 ◽  
Author(s):  
Onur Ergen ◽  
Daniel J. Ruebusch ◽  
Hui Fang ◽  
Asghar A. Rathore ◽  
Rehan Kapadia ◽  
...  
Keyword(s):  
Controlled Synthesis ◽  
Vapor Liquid Solid ◽  
Single Crystalline ◽  
Shape Controlled ◽  
Nanopillar Arrays ◽  
Vapor Liquid

Rational Concept for Designing Vapor–Liquid–Solid Growth of Single Crystalline Metal Oxide Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (10) ◽  
pp. 6406-6412 ◽  
Author(s):  
Annop Klamchuen ◽  
Masaru Suzuki ◽  
Kazuki Nagashima ◽  
Hideto Yoshida ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Vapor Liquid Solid ◽  
Single Crystalline ◽  
Oxide Nanowires ◽  
Metal Oxide Nanowires ◽  
Crystalline Metal ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

True Vapor–Liquid–Solid Process Suppresses Unintentional Carrier Doping of Single Crystalline Metal Oxide Nanowires

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4698-4705 ◽  
Author(s):  
Hiroshi Anzai ◽  
Masaru Suzuki ◽  
Kazuki Nagashima ◽  
Masaki Kanai ◽  
Zetao Zhu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Vapor Liquid Solid ◽  
Single Crystalline ◽  
Oxide Nanowires ◽  
Metal Oxide Nanowires ◽  
Carrier Doping ◽  
Crystalline Metal ◽  
True Vapor ◽  
Vapor Liquid

Catalyst-modified vapor-liquid-solid (VLS) growth of single crystalline β-Gallium Oxide (Ga2O3) thin film on Si-substrate

2019 ◽  
Vol 136 ◽  
pp. 106316 ◽  
Author(s):  
Rajib Saha ◽  
Subhrajit Sikdar ◽  
Basudev Nag Chowdhury ◽  
Anupam Karmakar ◽  
Sanatan Chattopadhyay
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Single Crystalline ◽  
Ga2o3 Thin Film ◽  
Vls Growth ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

About Nucleation on the Line of a Three-Phase Contact of a Vapor–Liquid–Solid During the Growth of Nanowires

2020 ◽  
Vol 55 (1) ◽  
pp. 32-37
Author(s):  
A. Yu. Vorob’ev ◽  
V. A. Nebol’sin ◽  
N. Swaikat ◽  
V. A. Yuriev
Keyword(s):  
Phase Contact ◽  
Vapor Liquid Solid ◽  
Three Phase ◽  
Vapor Liquid

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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