Extremely Low-Cost, Scalable Oxide Semiconductors Employing Poly(acrylic acid)-Decorated Carbon Nanotubes for Thin-Film Transistor Applications

2016 ◽  
Vol 8 (44) ◽  
pp. 29858-29865 ◽  
Author(s):  
Gyu Ri Hong ◽  
Sun Sook Lee ◽  
Yejin Jo ◽  
Min Jun Choi ◽  
Yun Chan Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Acrylic Acid ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Oxide Semiconductors ◽  
Poly Acrylic Acid

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

L-3: Late-News Paper: Active-Controlled Diode Emitters with Thin-Film Transistor and Carbon Nanotubes for FED Applications

2000 ◽  
Vol 31 (1) ◽  
pp. 1252 ◽  
Author(s):  
Yoon-Ho Song ◽  
Do-Hyung Kim ◽  
Sang-Woo Lee ◽  
Sang-Kyun Lee ◽  
Moon-Youn Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistor ◽  
Late News

scholarly journals All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Guiru Gu ◽  
Yunfeng Ling ◽  
Runyu Liu ◽  
Puminun Vasinajindakaw ◽  
Xuejun Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Analog Electronics ◽  
The One ◽  
Walled Carbon Nanotubes

We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.

Solution-Processable Carbon Nanotubes for Semiconducting Thin-Film Transistor Devices

2010 ◽  
Vol 22 (11) ◽  
pp. 1278-1282 ◽  
Author(s):  
Chun Wei Lee ◽  
Xuanding Han ◽  
Fuming Chen ◽  
Jun Wei ◽  
Yuan Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistor ◽  
Solution Processable
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