Silicon Quantum Dot-Based Fluorescence Turn-On Metal Ion Sensors in Live Cells

2016 ◽  
Vol 8 (36) ◽  
pp. 23953-23962 ◽  
Author(s):  
Namasivayam Dhenadhayalan ◽  
Hsin-Lung Lee ◽  
Kanchan Yadav ◽  
King-Chuen Lin ◽  
Yih-Tyng Lin ◽  
...  
RSC Advances ◽  
2014 ◽  
Vol 4 (99) ◽  
pp. 56539-56542 ◽  
Author(s):  
V. Haridas ◽  
P. P. Praveen Kumar ◽  
Cherumuttathu H. Suresh

Amino acid cysteine was transformed to fluorescent turn-on sensors for Cu+2 and Ag+. The metal ion binding was studied in detail by spectroscopic, microscopic, calorimetric and computational methods.


The Analyst ◽  
2016 ◽  
Vol 141 (20) ◽  
pp. 5886-5892 ◽  
Author(s):  
Jing Wang ◽  
Chenxing Jiang ◽  
Xiaoqi Wang ◽  
Ligeng Wang ◽  
Aimin Chen ◽  
...  

A new CdTe@SiO2@CdSe nanohybrid was demonstrated for the ratiometric fluorescence detection of Cd2+via the turn-on model and “ion-imprinting” technique.


The Analyst ◽  
2014 ◽  
Vol 139 (24) ◽  
pp. 6352-6356 ◽  
Author(s):  
Narendra Reddy Chereddy ◽  
M. V. Niladri Raju ◽  
Peethani Nagaraju ◽  
Venkat Raghavan Krishnaswamy ◽  
Purna Sai Korrapati ◽  
...  

A naphthalimide based Fe3+ selective fluorescence ‘turn-on’ probe that operates based on a PET mechanism has been synthesized, and its application in the detection of Fe3+ ions in aqueous samples and in live cells is explored.


2012 ◽  
Vol 41 (24) ◽  
pp. 7212 ◽  
Author(s):  
Lin Xu ◽  
Yufang Xu ◽  
Weiping Zhu ◽  
Chunmei Yang ◽  
Le Han ◽  
...  

2017 ◽  
Vol 4 (1) ◽  
pp. 191-202 ◽  
Author(s):  
Sayan Dey ◽  
Sumita Santra ◽  
Anupam Midya ◽  
Prasanta Kumar Guha ◽  
Samit Kumar Ray

Nanostructured, Cu-doped nickel oxides serve as excellent, ultra-fast, re-usable heavy metal ion sensors with an ultra-low detection limit and very high selectivity towards toxic Cr(vi) ions.


2008 ◽  
pp. 63-63-15 ◽  
Author(s):  
WR Seitz ◽  
LA Saari ◽  
Z Zhujun ◽  
S Pokornicki ◽  
RD Hudson ◽  
...  

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 318 ◽  
Author(s):  
Hiroyuki Yamada ◽  
Naoto Shirahata

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.


2008 ◽  
Vol 131 (1) ◽  
pp. 29-36 ◽  
Author(s):  
A.V. Legin ◽  
V.A. Babain ◽  
D.O. Kirsanov ◽  
O.V. Mednova

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