scholarly journals Band-Gap Widening at the Cu(In,Ga)(S,Se)2 Surface: A Novel Determination Approach Using Reflection Electron Energy Loss Spectroscopy

2016 ◽  
Vol 8 (32) ◽  
pp. 21101-21105 ◽  
Author(s):  
Dirk Hauschild ◽  
Evelyn Handick ◽  
Sina Göhl-Gusenleitner ◽  
Frank Meyer ◽  
Holger Schwab ◽  
...  
Keyword(s):  
Energy Loss ◽  
Band Gap ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Electron Energy Loss

scholarly journals Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

AIP Advances ◽  
2015 ◽  
Vol 5 (7) ◽  
pp. 077167 ◽  
Author(s):  
Sung Heo ◽  
Eunseog Cho ◽  
Hyung-Ik Lee ◽  
Gyeong Su Park ◽  
Hee Jae Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Band Gap ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Defect States ◽  
Electron Energy Loss

Isolated energy level in the band gap ofYb2Si2O7identified by electron energy-loss spectroscopy

2016 ◽  
Vol 93 (20) ◽  
Author(s):  
Takafumi Ogawa ◽  
Shunsuke Kobayashi ◽  
Masashi Wada ◽  
Craig A. J. Fisher ◽  
Akihide Kuwabara ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Loss ◽  
Band Gap ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Electron Energy Loss

Joint Density of States of Wide-Band-Gap Materials by Electron Energy Loss Spectroscopy

1998 ◽  
Vol 12 (13) ◽  
pp. 541-554 ◽  
Author(s):  
X. D. Fan ◽  
J. L. Peng ◽  
L. A. Bursill
Keyword(s):  
Energy Loss ◽  
Band Gap ◽  
Electron Energy ◽  
Dielectric Function ◽  
Density Of States ◽  
Electron Energy Loss Spectroscopy ◽  
Wide Band ◽  
Joint Density ◽  
Wide Band Gap ◽  
Electron Energy Loss

Kramers–Kronig analysis for parallel electron energy loss spectroscopy (PEELS) data is developed as a software package. When used with a JEOL 4000EX high-resolution transmission electron microscope (HRTEM) operating at 100 keV this allows us to obtain the dielectric function of relatively wide band gap materials with an energy resolution of approx. 1.4 eV. The imaginary part of the dielectric function allows the magnitude of the band gap to be determined as well as the joint-density-of-states function. Routines for obtaining three variations of the joint-density of states function, which may be used to predict the optical and dielectric response for angle-resolved or angle-integration scattering geometries are also described. Applications are presented for diamond, aluminum nitride (AlN), quartz ( SiO 2) and sapphire ( Al 2 O 3). The results are compared with values of the band gap and density of states results for these materials obtained with other techniques.

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