Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry

2016 ◽  
Vol 8 (27) ◽  
pp. 17622-17630 ◽  
Author(s):  
Alexander S. Yersak ◽  
Ryan J. Lewis ◽  
Jenny Tran ◽  
Yung C. Lee
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
In Situ Monitoring

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

A new approach to characterization of the transition temperatures of thin film NiTi shape memory alloys

2004 ◽  
Vol 19 (6) ◽  
pp. 1762-1767
Author(s):  
Nicholas W. Botterill ◽  
David M. Grant ◽  
Jianxin Zhang ◽  
Clive J. Roberts
Keyword(s):  
Thin Film ◽  
Shape Memory Alloys ◽  
Shape Memory ◽  
Transition Temperatures ◽  
New Approach ◽  
Novel Approach ◽  
Potential Applications ◽  
Niti Shape Memory Alloys

A novel approach in determining the transition temperatures of NiTi shape memory alloys was investigated and compared with conventional techniques. The technique is based on microthemal analysis using a scanning thermal microscope (SThM). In particular, this method has the potential to allow the transformation temperatures of thin films to be investigated in situ. Thin film shape memory alloys have potential applications, such as microactuators, where conventional analysis techniques are either not directly applicable to such samples or are difficult to perform.

Soft x-ray spectrometer for in situ monitoring of thin-film growth

1994 ◽  
Author(s):  
Per Skytt ◽  
Carl J. Englund ◽  
Nial Wassdahl ◽  
Derrick C. Mancini ◽  
Joseph Nordgren
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Monitoring ◽  
X Ray

Photoreflectance Characterization of the Semi-Insulating InP Substrate Interface with InGaAs and InAlAs Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
Weimin Zhou ◽  
H. Shen ◽  
J. Pamulapati ◽  
M. Dutta ◽  
B. R. Bennett ◽  
...  
Keyword(s):  
Electron Transition ◽  
In Situ Monitoring ◽  
Signal Phase ◽  
Mbe Growth ◽  
Substrate Interface ◽  
Inp Substrate ◽  
Excitonic Transition ◽  
Inp Substrates

ABSTRACTPhotoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.

In-situ monitoring of hydride formation in Pd thin film systems

2010 ◽  
Vol 35 (18) ◽  
pp. 9888-9892 ◽  
Author(s):  
R. Delmelle ◽  
G. Bamba ◽  
J. Proost
Keyword(s):  
Thin Film ◽  
In Situ Monitoring ◽  
Hydride Formation
Sign in / Sign up

Export Citation Format

Share Document