Vacuum Quenching for Large-Area Perovskite Film Deposition

2022 ◽  
Author(s):  
Leilei Gu ◽  
Fei Fei ◽  
Yibo Xu ◽  
Shubo Wang ◽  
Ningyi Yuan ◽  
...  
Keyword(s):  
Film Deposition ◽  
Large Area

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

scholarly journals MAGNETIC FIELD ASSISTED MICROWAVE PLASMA AND LARGE AREA DIAMOND FILM DEPOSITION

1990 ◽  
Vol 39 (10) ◽  
pp. 1635
Author(s):  
SONG RU-AN ◽  
CHENG XIAN-AN ◽  
ZHOU ZHONG-YI
Keyword(s):  
Magnetic Field ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Film Deposition ◽  
Large Area

Low-Thermal-Budget Solution Processing of Thin Films of Zinc Ferrite and Other Complex Oxides

2012 ◽  
Vol 1400 ◽  
Author(s):  
Ranajit Sai ◽  
Suresh D. Kulkarni ◽  
K. J. Vinoy ◽  
Navakanta Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Thin Films ◽  
Zinc Ferrite ◽  
Film Deposition ◽  
Vacuum System ◽  
Molar Ratio ◽  
Large Area ◽  
Thermal Budget ◽  
Control Film ◽  
Circuit Components ◽  
Low Thermal Budget

ABSTRACTFurther miniaturization of magnetic and electronic devices demands thin films of advanced nanomaterials with unique properties. Spinel ferrites have been studied extensively owing to their interesting magnetic and electrical properties coupled with stability against oxidation. Being an important ferrospinel, zinc ferrite has wide applications in the biological (MRI) and electronics (RF-CMOS) arenas. The performance of an oxide like ZnFe2O4depends on stoichiometry (defect structure), and technological applications require thin films of high density, low porosity and controlled microstructure, which depend on the preparation process. While there are many methods for the synthesis of polycrystalline ZnFe2O4powder, few methods exist for the deposition of its thin films, where prolonged processing at elevated temperature is not required. We report a novel, microwave-assisted, low temperature (<100°C) deposition process that is conducted in the liquid medium, developed for obtaining high quality, polycrystalline ZnFe2O4thin films on technologically important substrates like Si(100). An environment-friendly solvent (ethanol) and non-hazardous oxide precursors (β-diketonates of Zn and Fe in 1:2 molar ratio), forming a solution together, is subjected to irradiation in a domestic microwave oven (2.45 GHz) for a few minutes, leading to reactions which result in the deposition of ZnFe2O4films on Si (100) substrates suspended in the solution. Selected surfactants added to the reactant solution in optimum concentration can be used to control film microstructure. The nominal temperature of the irradiated solution, i.e., film deposition temperature, seldom exceeds 100°C, thus sharply lowering the thermal budget. Surface roughness and uniformity of large area depositions (50x50 mm2) are controlled by tweaking the concentration of the mother solution. Thickness of the films thus grown on Si (100) within 5 min of microwave irradiation can be as high as several microns. The present process, not requiring a vacuum system, carries a very low thermal budget and, together with a proper choice of solvents, is compatible with CMOS integration. This novel solution-based process for depositing highly resistive, adherent, smooth ferrimagnetic films on Si (100) is promising to RF engineers for the fabrication of passive circuit components. It is readily extended to a wide variety of functional oxide films.

Chimney-Shaped and Plateau-Shaped Gate Electrode Field Emission Arrays

1998 ◽  
Vol 509 ◽  
Author(s):  
F. G. Tarntair ◽  
C. C. Wang ◽  
W. K. Hong ◽  
H. K. Huang ◽  
H. C. Cheng
Keyword(s):  
Thin Film Deposition ◽  
Film Deposition ◽  
Uniform Structure ◽  
Flat Panel Display ◽  
Gate Electrode ◽  
Large Area ◽  
Flat Panel ◽  
Field Emitter Arrays ◽  
The Matrix ◽  
Field Emission Arrays

AbstractA triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.

Application of High Power DC Arc Plasma for Mass Production of High Quality Freestanding Diamond Films and Diamond Film Coated Cutting Tools

2010 ◽  
Vol 654-656 ◽  
pp. 1694-1699
Author(s):  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Yu Mei Tong ◽  
Wei Zhong Tang ◽  
Guang Chao Chen ◽  
...  
Keyword(s):  
High Power ◽  
Diamond Film ◽  
Mass Production ◽  
Cutting Tools ◽  
Diamond Films ◽  
Film Deposition ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

As quasi-thermodynamic equilibrium plasma, DC Arc Plasma has the advantage of very high gas temperature and thus the very high degree of activation of the precursors for diamond film deposition. The present paper reviews the progresses in the R&D of the novel high power dc arc plasma jet CVD system with rotating arc and operated at gas recycling mode for large area high quality diamond film deposition, developed at the University of Science and Technology Beijing (USTB) in the mid 1990s of the 20th century. Thanks to the continuous efforts made in the technological improvement in the past 15 years, considerable progresses have been achieved in the commercialization of this high power dc arcjet CVD system, which is now capable of mass production of large area high quality freestanding diamond films for optical, thermal, and mechanical (tool) applications. The present status in the commercialization and the property level of the resultant diamond films in optical, thermal, mechanical, dielectric, oxidation resistance, sand erosion resistance, and laser damage threshold etc. are presented. Based on the same high power dc arcjet technology, a novel high current extended dc arc plasma (HCEDCA) CVD system has been developed which successfully changed the diamond film deposition mode from 2D planar deposition in to 3D deposition (as confined by two hollow (virtue) columns). It is demonstrated to be advantageous for mass production of diamond thin film coated WC-Co cutting tools. Recent results in the R&D of thin diamond film coated WC-Co drills and end mills, and the results in field tests are discussed.

A Low Temperature Polycrystalline Si TFT Technology for Large area AMLCD Drivers

1997 ◽  
Vol 472 ◽  
Author(s):  
Krishna C. Saraswat ◽  
V. Subramanian ◽  
S. Jurichich
Keyword(s):  
Low Temperature ◽  
Silicon Germanium ◽  
Liquid Crystal Display ◽  
Amorphous Film ◽  
Economic Modeling ◽  
Film Deposition ◽  
Manufacturing Cost ◽  
Large Area ◽  
Device Structure ◽  
Glass Substrates

ABSTRACTIn this paper we describe a low thermal budget technology to fabricate high performance CMOS thin-film transistors (TFTs) in polycrystalline silicon and silicon/germanium on low cost glass substrates, for active-matrix liquid crystal display (AMLCD) applications. Based on modeling of delay times of the scan and data lines driven by n-channel TFTs we show that for AMLCDs with integrated drive circuits, mobility in excess of 40 cm2/V. sec will be required. Through proper optimization of amorphous film deposition, crystallization (nucleation and grain growth), fabrication process parameters and device structure we have obtained mobility in excess of 50 cm2/V. sec in Si TFTs, using conventional manufacturing technology compatible with glass substrates. Economic modeling suggests that low-temperature poly-TFT LCDs with integrated drivers will have a competitive manufacturing cost to LCDs of an equivalent size and resolution with α-Si pixel TFTs and single crystal drivers.

Multi-target reactive sputtering—A promising technology for large-area Pb(Zr,Ti)O3 thin film deposition

2007 ◽  
Vol 27 (13-15) ◽  
pp. 3789-3792 ◽  
Author(s):  
G. Suchaneck ◽  
W.-M. Lin ◽  
V.S. Vidyarthi ◽  
G. Gerlach ◽  
J. Hartung
Keyword(s):  
Thin Film ◽  
Reactive Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Large Area ◽  
Promising Technology
Sign in / Sign up

Export Citation Format

Share Document