Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

2021 ◽  
Author(s):  
Chi-Hsin Huang ◽  
Hsuan Chang ◽  
Tzu-Yi Yang ◽  
Yi-Chung Wang ◽  
Yu-Lun Chueh ◽  
...  
Keyword(s):  
Neuromorphic Computing ◽  
Artificial Synapse

Ferroelectric polymer-based artificial synapse for neuromorphic computing

2021 ◽  
Author(s):  
Sungjun Kim ◽  
Keun Heo ◽  
Sunghun Lee ◽  
Seunghwan Seo ◽  
Hyeongjun Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Neuromorphic Computing ◽  
Ferroelectric Polymer ◽  
Artificial Synapse ◽  
Effect Transistor

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.

Organic Synaptic Transistor with Integration of Memory and Neuromorphic Computing

2021 ◽  
Author(s):  
Shaomin Chen ◽  
Enlong Li ◽  
Rengjian Yu ◽  
Huihuang Yang ◽  
Yujie Yan ◽  
...  
Keyword(s):  
Computing System ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Neumann System ◽  
Artificial Synapse

Artificial synapse devices have caused great interest in recent years for attempting to emulate brain-like computing system and to conquer the bottleneck of Von Neumann system. However, integration of the...

scholarly journals Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sifan Li ◽  
Bochang Li ◽  
Xuewei Feng ◽  
Li Chen ◽  
Yesheng Li ◽  
...  
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Reset Voltage ◽  
Voltage Variation ◽  
Artificial Synapse ◽  
Metal Insulator Metal ◽  
Temporal And Spatial ◽  
Transition Voltage

AbstractState-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.

scholarly journals Biocompatible artificial synapses based on a zein active layer obtained from maize for neuromorphic computing

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Youngjin Kim ◽  
Chul Hyeon Park ◽  
Jun Seop An ◽  
Seung-Hye Choi ◽  
Tae Whan Kim
Keyword(s):  
Data Processing ◽  
Data Storage ◽  
Active Layer ◽  
Recognition Accuracy ◽  
Implantable Devices ◽  
Digital Data ◽  
Neuromorphic Computing ◽  
Artificial Synapse ◽  
Inference Test ◽  
Digital Data Storage

AbstractArtificial synaptic devices based on natural organic materials are becoming the most desirable for extending their fields of applications to include wearable and implantable devices due to their biocompatibility, flexibility, lightweight, and scalability. Herein, we proposed a zein material, extracted from natural maize, as an active layer in an artificial synapse. The synaptic device exhibited notable digital-data storage and analog data processing capabilities. Remarkably, the zein-based synaptic device achieved recognition accuracy of up to 87% and exhibited clear digit-classification results on the learning and inference test. Moreover, the recognition accuracy of the zein-based artificial synapse was maintained within a difference of less than 2%, regardless of mechanically stressed conditions. We believe that this work will be an important asset toward the realization of wearable and implantable devices utilizing artificial synapses.

High Photosensitivity Light-Controlled Planar ZnO Artificial Synapse for Neuromorphic Computing

Nanoscale ◽  
2021 ◽  
Author(s):  
Wei Xiao ◽  
Linbo Shan ◽  
Haitao Zhang ◽  
Yujun Fu ◽  
yan fei zhao ◽  
...  
Keyword(s):  
Human Brain ◽  
Computing System ◽  
Neuromorphic Computing ◽  
Artificial Synapse ◽  
Fundamental Physical ◽  
High Photosensitivity ◽  
The Ideal

Light-controlled artificial synapse which mimics the human brain has been considered to be one of the ideal candidates for the fundamental physical architecture of neuromorphic computing system owing to the...

HfO 2 ‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO 2 /BiFeO 3 /HfO 2 Design

2021 ◽  
pp. 2107131
Author(s):  
Zehui Peng ◽  
Facai Wu ◽  
Li Jiang ◽  
Guangsen Cao ◽  
Bei Jiang ◽  
...  
Keyword(s):  
Neuromorphic Computing ◽  
Artificial Synapse

A bio-inspired electronic synapse using solution processable organic small molecule

2019 ◽  
Vol 7 (6) ◽  
pp. 1491-1501 ◽  
Author(s):  
Jing-Yu Mao ◽  
Li Zhou ◽  
Yi Ren ◽  
Jia-Qin Yang ◽  
Chih-Li Chang ◽  
...  
Keyword(s):  
Small Molecule ◽  
Neuromorphic Computing ◽  
Solution Processed ◽  
Artificial Synapse ◽  
Solution Processable ◽  
Electronic Synapse

A trap-mediated solution-processed small molecule based artificial synaptic device is presented. This work reveals great potential for a small molecule based artificial synapse to serve in neuromorphic computing.

Air-stable Artificial Synapse Based on Lead-free Double Perovskite Cs2AgBiBr6 Film for Neuromorphic Computing

2021 ◽  
Author(s):  
Jie Lao ◽  
Wen Xu ◽  
Chunli Jiang ◽  
Ni Zhong ◽  
Bobo Tian ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Double Perovskite ◽  
Lead Free ◽  
Neuromorphic Computing ◽  
Artificial Synapse ◽  
Halide Perovskites

Halide perovskites (HPs) are promising materials for preparing nonvolatile memory and artificial synapse devices. However, the instability and toxicity of lead HPs seriously restrict their further application. Herein, a lead-free...

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