Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

2021 ◽  
Author(s):  
Chi-Hsin Huang ◽  
Yalun Tang ◽  
Tzu-Yi Yang ◽  
Yu-Lun Chueh ◽  
Kenji Nomura
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Thin Film Transistor ◽  
Tin Monoxide

Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor

2019 ◽  
Vol 11 (50) ◽  
pp. 47025-47036 ◽  
Author(s):  
Sungyeon Yim ◽  
Taikyu Kim ◽  
Baekeun Yoo ◽  
Hongwei Xu ◽  
Yong Youn ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Lanthanum Doping ◽  
Current Modulation ◽  
P Type ◽  
Tin Monoxide

scholarly journals High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tsung-Ta Wu ◽  
Wen-Hsien Huang ◽  
Chih-Chao Yang ◽  
Hung-Chun Chen ◽  
Tung-Ying Hsieh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
High Performance ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Si Thin Film

Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application

2016 ◽  
Vol 12 (3) ◽  
pp. 224-227 ◽  
Author(s):  
Po-Chun Chen ◽  
Yung-Hsien Wu ◽  
Zhi-Wei Zheng ◽  
Yu-Chien Chiu ◽  
Chun-Hu Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Tin Oxide ◽  
Oxygen Plasma ◽  
Thin Film Transistor ◽  
Oxide Semiconductor ◽  
Bipolar Conduction

Analysis of Carrier Transport Mechanism for p-Type SnO Thin-Film Transistor

2017 ◽  
Vol 748 ◽  
pp. 122-126
Author(s):  
Jian Qin ◽  
Lei Qiang
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Conduction Mechanism ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
P Type ◽  
Tin Monoxide ◽  
Thermally Activated Process

Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.

scholarly journals Back Cover: Wavy channel thin film transistor architecture for area efficient, high performance and low power displays (Phys. Status Solidi RRL 3/2014)

2014 ◽  
Vol 8 (3) ◽  
Author(s):  
Amir N. Hanna ◽  
Galo A. Torres Sevilla ◽  
Mohamed T. Ghoneim ◽  
Aftab M. Hussain ◽  
Rabab R. Bahabry ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
High Performance ◽  
Thin Film Transistor ◽  
Wavy Channel ◽  
Back Cover ◽  
Area Efficient

scholarly journals Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

2013 ◽  
Vol 103 (22) ◽  
pp. 224101 ◽  
Author(s):  
A. N. Hanna ◽  
M. T. Ghoneim ◽  
R. R. Bahabry ◽  
A. M. Hussain ◽  
M. M. Hussain
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Power ◽  
Thin Film Transistor ◽  
Wavy Channel ◽  
High Output ◽  
Area Efficient

Light/electric modulated approach for logic functions and artificial synapse behaviors by flexible IGZO TFTs with low power consumption

2021 ◽  
Author(s):  
Liqiang Guo ◽  
Guifa Zhang ◽  
Hui Han ◽  
Yongbin Hu ◽  
Guanggui Cheng
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Visible Light ◽  
Electron Mobility ◽  
Thin Film Transistor ◽  
Operating Voltage ◽  
High Electron ◽  
Response Characteristics ◽  
Logic Operations ◽  
Logic Functions

Abstract In recent years, low power electronic devices have attracted more and more interests. Here, flexible thin-film transistors(TFTs) with In-Ga-Zn-O (IGZO) as semiconductor channel material were fabricated on polyethylene terephthalate (PET) substrates. The device exhibits good electrical properties at low operating voltage, including high on/off ratio of ~ 7.8 × 106 and high electron mobility of ~ 23.1 cm2V-1s-1. The device also has excellent response characteristics to visible light. With the increase of visible light intensity, the threshold voltage of IGZO TFTs decreases continuously, but the electron mobility increases gradually. Based on the unique response ability of the device to light, we proposed and demonstrated that a single thin-film transistor can realize different logic operations under the light/electricity mixed modulation, including “AND” and “OR”. In addition, we also simulated some basic artificial synaptic behaviors, including excitatory postsynaptic current and paired-pulse facilitation. Thus, IGZO TFTs operating at low voltages not only have the potential to construct multifunctional optoelectronic devices, but also provide a new idea for simplifying the design of programmable logic circuits.

Low Power Thin Film Transistor

2017 ◽  
Vol 9 (11) ◽  
pp. 2013-2018
Author(s):  
Teresa Oh
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Thin Film Transistor
Sign in / Sign up

Export Citation Format

Share Document