Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor

2019 ◽  
Vol 11 (50) ◽  
pp. 47025-47036 ◽  
Author(s):  
Sungyeon Yim ◽  
Taikyu Kim ◽  
Baekeun Yoo ◽  
Hongwei Xu ◽  
Yong Youn ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Lanthanum Doping ◽  
Current Modulation ◽  
P Type ◽  
Tin Monoxide

Analysis of Carrier Transport Mechanism for p-Type SnO Thin-Film Transistor

2017 ◽  
Vol 748 ◽  
pp. 122-126
Author(s):  
Jian Qin ◽  
Lei Qiang
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Conduction Mechanism ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
P Type ◽  
Tin Monoxide ◽  
Thermally Activated Process

Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.

Effect of nitrogen-doping on drain current modulation characteristics of an indium-gallium-zinc oxide thin-film transistor

2020 ◽  
Vol 31 (26) ◽  
pp. 265201 ◽  
Author(s):  
Keonwon Beom ◽  
Minju Kim ◽  
Hyerin Lee ◽  
Hyung Jun Kim ◽  
Seong-Yong Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Nitrogen Doping ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Current Modulation ◽  
Indium Gallium

scholarly journals p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Daiki Itohara ◽  
Kazato Shinohara ◽  
Toshiyuki Yoshida ◽  
Yasuhisa Fujita
Keyword(s):  
Thin Film ◽  
Arc Discharge ◽  
Thin Film Transistor ◽  
Chamber Pressure ◽  
Zno Nanoparticle ◽  
Zno Nps ◽  
Lower Chamber ◽  
Hall Effect Measurements ◽  
Particle Process ◽  
P Type

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Gas Sensing ◽  
Thin Film Transistor ◽  
Highly Sensitive ◽  
P Type ◽  
Sensing Characteristics

scholarly journals SnS thin films prepared by H2S-free process and its p-type thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015112 ◽  
Author(s):  
Fan-Yong Ran ◽  
Zewen Xiao ◽  
Hidenori Hiramatsu ◽  
Keisuke Ide ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistor ◽  
Free Process ◽  
Sns Thin Films ◽  
P Type

p-type semiconducting α,ω-dihexylsexithiophene for an organic thin film transistor

2007 ◽  
Vol 101 (6) ◽  
pp. 064502 ◽  
Author(s):  
Jae-Hong Kwon ◽  
Jung-Hoon Seo ◽  
Hochul Kang ◽  
Dong Hoon Choi ◽  
Byeong-Kwon Ju
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
P Type

Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽  
2018 ◽  
Vol 3 (27) ◽  
pp. 1525-1533 ◽  
Author(s):  
Eleonora Macchia ◽  
Alla Zak ◽  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Fold Increase ◽  
Field Effect Mobility ◽  
Figures Of Merit ◽  
Electronic Channel ◽  
Improved Performance ◽  
P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

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