Reactive Sputtered Silicon Nitride as an Alternative Passivation Layer for Microelectrode Arrays in Sensitive Bioimpedimetric Cell Monitoring

2021 ◽  
Author(s):  
Sabine Schmidt ◽  
Tobias Haensch ◽  
Ronny Frank ◽  
Heinz-Georg Jahnke ◽  
Andrea A. Robitzki
Keyword(s):  
Silicon Nitride ◽  
Microelectrode Arrays ◽  
Passivation Layer ◽  
Cell Monitoring

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

2008 ◽  
Vol 516 (5) ◽  
pp. 770-772 ◽  
Author(s):  
S.P. Tiwari ◽  
P. Srinivas ◽  
S. Shriram ◽  
Nitin S. Kale ◽  
S.G. Mhaisalkar ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
Organic Fets

Efficiency enhanced emitter wrap-through (EWT) screen-printed solar cells with non-uniform thickness of silicon nitride passivation layer in via-holes

Solar Energy ◽  
2013 ◽  
Vol 90 ◽  
pp. 188-194 ◽  
Author(s):  
Jaeeock Cho ◽  
Honggu Lee ◽  
Deochwan Hyun ◽  
Yonghwa Lee ◽  
Woowon Jung ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Passivation Layer ◽  
Uniform Thickness ◽  
Via Holes ◽  
Screen Printed

Silicon Nitride Surface Modification and Cell Adhesion

2009 ◽  
Vol 610-613 ◽  
pp. 1022-1025
Author(s):  
Yi Zhao ◽  
Xiao Ying Lv ◽  
Zheng Lin Jiang ◽  
Xia Li ◽  
Yan Huang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Neural Activity ◽  
Hippocampal Neurons ◽  
Microelectrode Arrays ◽  
Coomassie Brilliant Blue ◽  
Protein Assay ◽  
Force Microscopy ◽  
Adhesion Ability ◽  
Atomic Force ◽  
Coomassie Brilliant

Silicon microelectrode arrays (Si MEAs) have great potential in recording of neural activity; the biocompatibility of silicon nitride has gained much attention as a part of Si MEAs. In this study, we used alternating polycations, polyethyleneimine (PEI), and polyanions, gelatin, to fabricate multilayer films built up by LbL deposition on silicon nitride wafers. Then the samples surfaces were characterized by contact angle system and atomic force microscopy (AFM). The amount of proteins adsorbed on silicon nitride and modified silicon nitride were measured by a modified Coomassie brilliant blue (CBB) protein assay. Cell culture results showed that the modified silicon nitride could increase the adhesion ability of the hippocampal neurons.

Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors

2005 ◽  
Vol 864 ◽  
Author(s):  
D. Benoit ◽  
P. Morin ◽  
M. Cohen ◽  
P. Bulkin ◽  
J. L. Regolini
Keyword(s):  
Silicon Nitride ◽  
Quantum Efficiency ◽  
Dark Current ◽  
Complex Refractive Index ◽  
Electrical Characterization ◽  
Hydrogen Desorption ◽  
Passivation Layer ◽  
Visible Range ◽  
High Hydrogen ◽  
Active Pixel

AbstractIn the present study, we have analyzed the influence of the silicon nitride (SiN) passivation layer properties on the mean dark current and the quantum efficiency of CMOS APS (Active Pixel Sensor) through electrical characterization of lot wafers processed with three different SiN passivation films. The SiN layers were characterized by Spectroscopic Ellipsometry (SE) and Fourier Transform Infra Red (FTIR) spectroscopy to get the optical indices and the hydrogen content of the films, respectively. Hydrogen desorption was also studied by Thermal Desorption Spectrometry (TDS) experiments.The different chemical bond concentrations enable to explain the device performance. It is shown that high [Si-H] and low [Si-N] bonds concentrations lead to high hydrogen desorption from the SiN films. Thus, the lowest dark current values have also been obtained with such silicon nitride passivation layers. Consequently, results are in agreement with the hydrogen passivation of defects being responsible of thermally generated carriers. Concerning the quantum efficiency (QE), it is highly influenced by the optical indices of the SiN passivation layer.Actually, the thickness and complex refractive index of the SiN layer affect the light reflection, while the light absorption, in the visible range, is controlled by the [Si-Si] bonds concentration. There are also competing requirements to minimize dark current and to maximize quantum efficiency. In fact, high [Si-H] and low [Si-N] bonds concentrations (for good passivation) are generally observed in silicon-rich SiN films, which also contain high amount of [Si-Si] bonds (inducing high absorption, thus low QE). Increasing simultaneously the [Si-H] and [N-H] bonds concentrations in the passivation layer can be a way to have high hydrogen desorption during passivation anneal just preserving a transparent layer.

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