Low Deposition Temperature Amorphous ALD-Ga2O3 Thin Films and Decoration with MoS2 Multilayers toward Flexible Solar-Blind Photodetectors

2021 ◽  
Vol 13 (35) ◽  
pp. 41802-41809
Author(s):  
Yan Yang ◽  
Weiming Liu ◽  
Tiantian Huang ◽  
Mengxia Qiu ◽  
Rui Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Solar Blind ◽  
Low Deposition Temperature

scholarly journals The physical and optical properties of AZO thin films on teflon substrate at low deposition temperature by spray pyrolysis

2020 ◽  
Vol 18 (3) ◽  
pp. 1222
Author(s):  
Sofea Nabila Hazmin ◽  
F. S. S. Zahid ◽  
N. S. M. Sauki ◽  
M. H. Mamat ◽  
M. N. Amalina
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Deposition Temperature ◽  
Spray Pyrolysis Technique ◽  
Optical Measurements ◽  
Physical Analysis ◽  
X Ray Diffraction ◽  
Visible Reflectance ◽  
Low Deposition Temperature

<span>This paper presents the physical and optical properties of AZO thin films on Teflon substrate at low deposition temperature by spray pyrolysis. In this study, the effect of different process parameters such as spray time and substrate to nozzle distance on the physical and optical characteristic of aluminium doped zinc oxide (AZO) deposited on Teflon substrates was investigated. The AZO thin films were successfully deposited onto Teflon substrate by spray pyrolysis technique at low deposition temperature. The physical analysis by X-ray diffraction (XRD) shows that the deposited Teflon substrate films have a preferred orientation along the direction (100) and (101). Optical measurements were conducted using Jasco/V-670 Ex Uv-Vis-NIR Spectrophotometer model to confirms that in visible ray it is possible to get good reflectance of AZO films with a reflection of 80%. The values of band gaps Eg were calculated from the spectra of UV-Visible reflectance that were vary between 3.06 and 3.14 eV. </span>

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

2012 ◽  
Vol 324 (5) ◽  
pp. 711-716 ◽  
Author(s):  
Safia Anjum ◽  
M. Shahid Rafique ◽  
M. Khaleeq-ur-Rahman ◽  
K. Siraj ◽  
Arslan Usman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Deposition Temperature ◽  
Low Deposition Temperature

Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)

2016 ◽  
Vol 4 (12) ◽  
pp. 2382-2389 ◽  
Author(s):  
Jie Huang ◽  
Hengji Zhang ◽  
Antonio Lucero ◽  
Lanxia Cheng ◽  
Santosh KC ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Inorganic Hybrid ◽  
Diethyl Zinc ◽  
Layer Deposition ◽  
Semiconductor Thin Films ◽  
Sharp Interfaces ◽  
Low Deposition Temperature

Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic–inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature.

scholarly journals UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5601-5609 ◽  
Author(s):  
Kwan Hyuck Yoon ◽  
Hongbum Kim ◽  
Yong-Eun Koo Lee ◽  
Nabeen K. Shrestha ◽  
Myung Mo Sung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Diffusion Barriers ◽  
Layer Deposition ◽  
Low Deposition Temperature

We present UV-ALD as a promising approach to fabricate effective gas-diffusion barrier thin films at low deposition temperature (40 °C).

Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas

2007 ◽  
Vol 29-30 ◽  
pp. 215-218 ◽  
Author(s):  
Eun Soo Lee ◽  
Rachmat Adhi Wibowo ◽  
Kyoo Ho Kim
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Preferential Orientation ◽  
Zno Thin Films ◽  
Zno Films ◽  
Sputtering Deposition ◽  
Infra Red ◽  
Doped Zno ◽  
Low Deposition Temperature

Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

Deposition temperature and UV irradiation effects on the H2S sensing properties of Te thin films

2015 ◽  
Vol 119 (2) ◽  
pp. 659-665
Author(s):  
M. Manouchehrian ◽  
M. M. Larijani ◽  
S. M. Elahi ◽  
M. A. Moghri Moazzen
Keyword(s):  
Thin Films ◽  
Uv Irradiation ◽  
Deposition Temperature ◽  
Irradiation Effects ◽  
Sensing Properties
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