Direct Observation of Interface-Dependent Multidomain State in the BaTiO3 Tunnel Barrier of a Multiferroic Tunnel Junction Memristor

2021 ◽  
Vol 13 (36) ◽  
pp. 43641-43647
Author(s):  
Qiqi Zhang ◽  
Xiaoguang Li ◽  
Jing Zhu
Keyword(s):  
Direct Observation ◽  
Tunnel Junction ◽  
Tunnel Barrier

scholarly journals Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pawan Tyagi ◽  
Hayden Brown ◽  
Andrew Grizzle ◽  
Christopher D’Angelo ◽  
Bishnu R. Dahal
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier ◽  
Molecular Device ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes ◽  
Covalently Bonded ◽  
Wide Range ◽  
Device Properties ◽  
Theoretical Simulations

AbstractNearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

Direct observation of two-dimensional magnetopolarons in a resonant tunnel junction

1990 ◽  
Vol 65 (2) ◽  
pp. 235-238 ◽  
Author(s):  
G. S. Boebinger ◽  
A. F. J. Levi ◽  
S. Schmitt-Rink ◽  
A. Passner ◽  
L. N. Pfeiffer ◽  
...  
Keyword(s):  
Direct Observation ◽  
Tunnel Junction ◽  
Two Dimensional ◽  
Resonant Tunnel

X‐ray characteristics of a niobium superconducting tunnel junction with a highly transmissive tunnel barrier

1993 ◽  
Vol 73 (10) ◽  
pp. 5098-5104 ◽  
Author(s):  
N. Rando ◽  
A. Peacock ◽  
C. Foden ◽  
A. v. Dordrecht ◽  
J. Lumley ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Superconducting Tunnel Junction ◽  
Tunnel Barrier ◽  
X Ray

Effect of Ta getter on the quality of MgO tunnel barrier in the polycrystalline CoFeB∕MgO∕CoFeB magnetic tunnel junction

2007 ◽  
Vol 90 (1) ◽  
pp. 012505 ◽  
Author(s):  
Y. S. Choi ◽  
Y. Nagamine ◽  
K. Tsunekawa ◽  
H. Maehara ◽  
D. D. Djayaprawira ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Barrier
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