Tunable and Robust Near-Room-Temperature Intrinsic Ferromagnetism of a van der Waals Layered Cr-Doped 2H-MoTe2 Semiconductor with an Out-of-Plane Anisotropy

2021 ◽  
Author(s):  
Li Yang ◽  
Hao Wu ◽  
Liang Zhang ◽  
Gaojie Zhang ◽  
Hongda Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Van Der Waals ◽  
Plane Anisotropy ◽  
Out Of Plane ◽  
Intrinsic Ferromagnetism

Fabrication and magnetic-electronic properties of van der Waals Cr4Te5 ferromagnetic film

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Hao Liu ◽  
Huan Zheng ◽  
Chuanlan Ma ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Van Der Waals ◽  
Ferromagnetic Film ◽  
Ferromagnetic Materials ◽  
Two Dimensional ◽  
Actual Number ◽  
Intrinsic Ferromagnetism

Exploiting two-dimensional room temperature ferromagnetic materials is always a significant and valuable work. However, the actual number of satisfied materials with intrinsic ferromagnetism is very limited. Here, the van der...

Ferroelectricity and phase transitions in In2Se3 van der Waals material

Nanoscale ◽  
2020 ◽  
Vol 12 (44) ◽  
pp. 22688-22697
Author(s):  
Maryam Soleimani ◽  
Mahdi Pourfath
Keyword(s):  
Phase Transitions ◽  
Electric Field ◽  
Applied Electric Field ◽  
Room Temperature ◽  
Van Der Waals ◽  
Out Of Plane

Van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field.

Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy

2008 ◽  
Vol 92 (10) ◽  
pp. 102508 ◽  
Author(s):  
Baptiste Carvello ◽  
Clarisse Ducruet ◽  
Bernard Rodmacq ◽  
Stéphane Auffret ◽  
Eric Gautier ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Plane Anisotropy ◽  
Out Of Plane

Pinning-assisted out-of-plane anisotropy in reverse stack FeCo/FePt intermetallic bilayers for controlled switching in spintronics

2021 ◽  
pp. 160249
Author(s):  
Garima Vashisht ◽  
Utkarsh Shashank ◽  
Surbhi Gupta ◽  
Rohit Medwal ◽  
C.L. Dong ◽  
...  
Keyword(s):  
Controlled Switching ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Mid infrared polarization engineering via sub-wavelength biaxial hyperbolic van der Waals crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar
Keyword(s):  
Room Temperature ◽  
Extinction Ratio ◽  
Polarization State ◽  
Van Der Waals ◽  
Photonic Devices ◽  
Mid Infrared ◽  
Precise Control ◽  
Electromagnetic Simulations ◽  
Frequency Regime ◽  
Sub Wavelength

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .

scholarly journals Intercorrelated ferroelectrics in 2D van der Waals materials

2021 ◽  
Author(s):  
Yan Liang ◽  
Shiying Shen ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Yandong Ma
Keyword(s):  
Van Der Waals ◽  
Out Of Plane ◽  
Fundamental Phenomenon ◽  
Van Der Waals Materials

2D intercorrelated ferroelectrics, exhibiting a coupled in-plane and out-of-plane ferroelectricity, is a fundamental phenomenon in the field of condensed-mater physics. The current research is based on the paradigm of bi-directional...

scholarly journals A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chaowei Hu ◽  
Kyle N. Gordon ◽  
Pengfei Liu ◽  
Jinyu Liu ◽  
Xiaoqing Zhou ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Surface States ◽  
Magnetic Coupling ◽  
Anomalous Hall Effect ◽  
Saturation Field ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Ideal System ◽  
Out Of Plane ◽  
Weak Interlayer ◽  
Quantum Phenomena

AbstractMagnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall effect and Majorana modes, etc. Their successful material realization is thus essential for our fundamental understanding and potential technical revolutions. By realizing a bulk van der Waals material MnBi4Te7 with alternating septuple [MnBi2Te4] and quintuple [Bi2Te3] layers, we show that it is ferromagnetic in plane but antiferromagnetic along the c axis with an out-of-plane saturation field of ~0.22 T at 2 K. Our angle-resolved photoemission spectroscopy measurements and first-principles calculations further demonstrate that MnBi4Te7 is a Z2 antiferromagnetic TI with two types of surface states associated with the [MnBi2Te4] or [Bi2Te3] termination, respectively. Additionally, its superlattice nature may make various heterostructures of [MnBi2Te4] and [Bi2Te3] layers possible by exfoliation. Therefore, the low saturation field and the superlattice nature of MnBi4Te7 make it an ideal system to investigate rich emergent phenomena.

scholarly journals Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions

2014 ◽  
Vol 2 (11) ◽  
pp. 1064-1069 ◽  
Author(s):  
Nilanthy Balakrishnan ◽  
Zakhar R. Kudrynskyi ◽  
Michael W. Fay ◽  
Garry W. Mudd ◽  
Simon A. Svatek ◽  
...  
Keyword(s):  
Room Temperature ◽  
Van Der Waals

scholarly journals Consecutive Vibrational Redistribution and Predissociation Processes in s-Tetrazine–Argon Van Der Waals Complexes

1983 ◽  
Vol 2 (3-4) ◽  
pp. 125-135 ◽  
Author(s):  
J. J. F. Ramaekers ◽  
L. B. Krijnen ◽  
H. J. Lips ◽  
J. Langelaar ◽  
R. P. H. Rettschnick
Keyword(s):  
Decay Time ◽  
Van Der Waals ◽  
Stagnation Pressure ◽  
Van Der Waals Complexes ◽  
Supersonic Expansion ◽  
Vibrational Predissociation ◽  
Out Of Plane ◽  
Spectrally Resolved ◽  
Plane Mode

s-Tetrazine argon complexes T−Arn (n = 1, 2) are formed in a supersonic expansion of argon seeded with s-tetrazine. The expansion was conducted through a nozzle of 50 or 100 μm with an argon stagnation pressure between 1 and 1.5 bar. From spectrally resolved measurements it is clear that vibrational redistribution processes as well as vibrational predissociation processes take place after SVL excitation within the complex.From rise and decay time experiments it can be concluded, that after excitation of the 6a1 complex level, the above mentioned processes are consecutive and not parallel. It appears that the out of plane mode 16a couples with the Van der Waals stretching mode. The predissociation rate of the 16a2 complex is observed to be 2.3 × 109 s−1.

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