scholarly journals Near-Broken-Gap Alignment between FeWO4 and Fe2WO6 for Ohmic Direct p–n Junction Thermoelectrics

2021 ◽  
Vol 13 (6) ◽  
pp. 7416-7422
Author(s):  
Raphael Schuler ◽  
Federico Bianchini ◽  
Truls Norby ◽  
Helmer Fjellvåg
Keyword(s):  
Broken Gap

Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

2007 ◽  
Vol 102 (11) ◽  
pp. 113710 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Type Ii ◽  
Interface Roughness Scattering ◽  
Broken Gap

Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Type Ii Superlattice ◽  
Superlattice Structure ◽  
Current Densities ◽  
Semi Empirical ◽  
Broken Gap ◽  
The Ideal

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.

Performance evaluation of broken gap Esaki tunnel diodes on Si and GaSb substrates

2016 ◽  
Vol 52 (1) ◽  
pp. 73-75
Author(s):  
P.M. Thomas ◽  
M.J. Filmer ◽  
A. Gaur ◽  
S.L. Rommel ◽  
K. Bhatnagar ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Tunnel Diodes ◽  
Broken Gap

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus ◽  
Band Alignment ◽  
Narrow Bandgap ◽  
Interband Tunneling ◽  
Broken Gap

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.

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