Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

2020 ◽  
Vol 12 (50) ◽  
pp. 56186-56194
Author(s):  
Pengfei Li ◽  
Dan Wang ◽  
Zongbo Zhang ◽  
Yunlong Guo ◽  
Lang Jiang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Temperature Solution ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

2019 ◽  
Vol 483 ◽  
pp. 803-810 ◽  
Author(s):  
Muhammad Ismail ◽  
Asma Ahmad ◽  
Khalid Mahmood ◽  
Tahira Akbar ◽  
Anwar Manzoor Rana ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
Resistive Switching Memory ◽  
Switching Memory
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