Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

2020 ◽  
Author(s):  
Matthias J. Grotevent ◽  
Claudio U. Hail ◽  
Sergii Yakunin ◽  
Dominik Bachmann ◽  
Gökhan Kara ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Infrared Photodetectors ◽  
Temperature Dependent ◽  
Carrier Transfer ◽  
Colloidal Quantum Dot

Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

2020 ◽  
Author(s):  
Matthias Grotevent ◽  
Claudio U. Hail ◽  
Sergii Yakunin ◽  
Dominik Bachmann ◽  
Gökhan Kara ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Room Temperature ◽  
Red Light ◽  
Surface States ◽  
Surface Oxidation ◽  
Large Temperature ◽  
Temperature Dependent ◽  
Carrier Transfer ◽  
Specific Detectivity

Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infra-red light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene photodetectors by performing steady-state and time-dependent measurements over a large temperature range of 80–300 K. We find that the temperature dependence of photo-induced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 10<sup>10</sup> Jones at a wavelength of 1280 nm and temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate-voltage-dependent characterization presented here constitute an important step in expanding our knowledge of charge transfer at interfaces of low dimensional materials and towards the realization of next-generation optoelectronic devices.<br>

Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

2020 ◽  
Author(s):  
Matthias Grotevent ◽  
Claudio U. Hail ◽  
Sergii Yakunin ◽  
Dominik Bachmann ◽  
Gökhan Kara ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Room Temperature ◽  
Red Light ◽  
Surface States ◽  
Surface Oxidation ◽  
Large Temperature ◽  
Temperature Dependent ◽  
Carrier Transfer ◽  
Specific Detectivity

Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infra-red light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene photodetectors by performing steady-state and time-dependent measurements over a large temperature range of 80–300 K. We find that the temperature dependence of photo-induced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 10<sup>10</sup> Jones at a wavelength of 1280 nm and temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate-voltage-dependent characterization presented here constitute an important step in expanding our knowledge of charge transfer at interfaces of low dimensional materials and towards the realization of next-generation optoelectronic devices.<br>

Quantitative measurements of charge carrier hopping transport properties in depleted-heterojunction PbS colloidal quantum dot solar cells from temperature dependent current–voltage characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93180-93194 ◽  
Author(s):  
Andreas Mandelis ◽  
Lilei Hu ◽  
Jing Wang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Temperature Dependent ◽  
Hopping Transport ◽  
Quantitative Measurements ◽  
Quantum Dot Solar Cells ◽  
Current Voltage ◽  
Colloidal Quantum Dot ◽  
Current Voltage Characteristics

Non-conventional (anomalous) current–voltage characteristics are reported with increasing frequency for colloidal quantum dot-based (CQD) solar cells.

scholarly journals Deciphering the role of quantum dot size in the ultrafast charge carrier dynamics at the perovskite–quantum dot interface

2020 ◽  
Vol 8 (42) ◽  
pp. 14834-14844
Author(s):  
Piotr Piatkowski ◽  
Sofia Masi ◽  
Pavel Galar ◽  
Mario Gutiérrez ◽  
Thi Tuyen Ngo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Rate Constants ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Carrier Transfer ◽  
Charge Carrier Dynamics ◽  
Conduction Bands

Charge-carrier transfer (CT) from the perovskite host to PbS QDs were studied using fs-transient absorption and THz techniques. The CT rate constants increase with the size of QDs due to a change in the position of valence and conduction bands in PbS QDs.

Response of Colloidal Quantum Dot Infrared Photodetectors to Modulated Optical Signals

2015 ◽  
Vol 15 (6) ◽  
pp. 3274-3280 ◽  
Author(s):  
Hamed Dehdashti Jahromi ◽  
Ali Binaie ◽  
Mohammad Hossein Sheikhi ◽  
Abbas Zarifkar ◽  
Hamid Nadgaran
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Optical Signals ◽  
Quantum Dot Infrared Photodetectors ◽  
Colloidal Quantum Dot

Temperature dependent responsivity of quantum dot infrared photodetectors

2007 ◽  
Vol 50 (2-3) ◽  
pp. 166-170 ◽  
Author(s):  
S.Y. Wang ◽  
M.C. Lo ◽  
H.Y. Hsiao ◽  
H.S. Ling ◽  
C.P. Lee
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Temperature Dependent ◽  
Quantum Dot Infrared Photodetectors

scholarly journals Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation

2015 ◽  
Vol 27 (21) ◽  
pp. 3325-3330 ◽  
Author(s):  
Graham H. Carey ◽  
Larissa Levina ◽  
Riccardo Comin ◽  
Oleksandr Voznyy ◽  
Edward H. Sargent
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Surface Passivation ◽  
Diffusion Length ◽  
Carrier Diffusion ◽  
Colloidal Quantum Dot ◽  
Charge Carrier Diffusion

Slow recombination in quantum dot solid solar cell using p–i–n architecture with organic p-type hole transport material

2015 ◽  
Vol 3 (41) ◽  
pp. 20579-20585 ◽  
Author(s):  
Xiaoliang Zhang ◽  
Yolanda Justo ◽  
Jorick Maes ◽  
Willem Walravens ◽  
Jindan Zhang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Hole Transport ◽  
Organic P ◽  
Colloidal Quantum Dot ◽  
Carrier Separation ◽  
P Type

The interfaces between different materials in the heterojunction colloidal quantum dot (QD) solar cell play an important role for charge carrier separation, recombination and collection.

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