Imbalanced charge carrier mobility and Schottky junction induced anomalous current-voltage characteristics of excitonic PbS colloidal quantum dot solar cells

2016 ◽  
Vol 155 ◽  
pp. 155-165 ◽  
Author(s):  
Lilei Hu ◽  
Andreas Mandelis ◽  
Xinzheng Lan ◽  
Alexander Melnikov ◽  
Sjoerd Hoogland ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Schottky Junction ◽  
Quantum Dot Solar Cells ◽  
Current Voltage ◽  
Colloidal Quantum Dot ◽  
Current Voltage Characteristics

Quantitative measurements of charge carrier hopping transport properties in depleted-heterojunction PbS colloidal quantum dot solar cells from temperature dependent current–voltage characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93180-93194 ◽  
Author(s):  
Andreas Mandelis ◽  
Lilei Hu ◽  
Jing Wang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Temperature Dependent ◽  
Hopping Transport ◽  
Quantitative Measurements ◽  
Quantum Dot Solar Cells ◽  
Current Voltage ◽  
Colloidal Quantum Dot ◽  
Current Voltage Characteristics

Non-conventional (anomalous) current–voltage characteristics are reported with increasing frequency for colloidal quantum dot-based (CQD) solar cells.

scholarly journals Surface-Modified Graphene Oxide/Lead Sulfide Hybrid Film-Forming Ink for High-Efficiency Bulk Nano-Heterojunction Colloidal Quantum Dot Solar Cells

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Yaohong Zhang ◽  
Guohua Wu ◽  
Chao Ding ◽  
Feng Liu ◽  
Dong Liu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Solar Cells ◽  
Quantum Dot ◽  
Active Layer ◽  
Lead Sulfide ◽  
Carrier Mobility ◽  
Quantum Dot Solar Cells ◽  
Modified Graphene Oxide ◽  
Colloidal Quantum Dot ◽  
Modified Graphene

AbstractSolution-processed colloidal quantum dot solar cells (CQDSCs) is a promising candidate for new generation solar cells. To obtain stable and high performance lead sulfide (PbS)-based CQDSCs, high carrier mobility and low non-radiative recombination center density in the PbS CQDs active layer are required. In order to effectively improve the carrier mobility in PbS CQDs layer of CQDSCs, butylamine (BTA)-modified graphene oxide (BTA@GO) is first utilized in PbS-PbX2 (X = I−, Br−) CQDs ink to deposit the active layer of CQDSCs through one-step spin-coating method. Such surface treatment of GO dramatically upholds the intrinsic superior hole transfer peculiarity of GO and attenuates the hydrophilicity of GO in order to allow for its good dispersibility in ink solvent. The introduction of BTA@GO in CQDs layer can build up a bulk nano-heterojunction architecture, which provides a smooth charge carrier transport channel in turn improves the carrier mobility and conductivity, extends the carriers lifetime and reduces the trap density of PbS-PbX2 CQDs film. Finally, the BTA@GO/PbS-PbX2 hybrid CQDs film-based relatively large-area (0.35 cm2) CQDSCs shows a champion power conversion efficiency of 11.7% which is increased by 23.1% compared with the control device.

scholarly journals Enhanced charge carrier transport properties in colloidal quantum dot solar cells via organic and inorganic hybrid surface passivation

2016 ◽  
Vol 4 (48) ◽  
pp. 18769-18775 ◽  
Author(s):  
John Hong ◽  
Bo Hou ◽  
Jongchul Lim ◽  
Sangyeon Pak ◽  
Byung-Sung Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Surface Passivation ◽  
Charge Carrier Transport ◽  
Inorganic Hybrid ◽  
Quantum Dot Solar Cells ◽  
Colloidal Quantum Dot ◽  
Carrier Transport Properties

We report a PbS QD hybrid passivation structure to eliminate trap sites while increasing charge extraction in QD solar cells.

scholarly journals Characterization of Thin MAPb(I1–xBrx)3 Alloy Halide Perovskite Films Prepared by Sequential Physical Vapor Deposition

2021 ◽  
Vol 9 ◽  
Author(s):  
Juvet Nche Fru ◽  
Nolwazi Nombona ◽  
Mmantsae Diale
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Solar Cells ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Current Voltage

Lead iodide (PbI2)-rich methylammonium lead bromide-iodide (MAPb(I1–xBrx)3) thin-films were prepared by sequential physical vapor deposition of methylammonium lead tri-bromide (MAPbBr3) on methylammonium lead tri-iodide (MAPbI3) bottom layer. The structural, optical, morphological, and electrical properties of the thin-films were studied as the thickness of methylammonium bromide (MABr) was increased from 300 to 500 nm. X-ray diffractograms confirmed transformation of tetragonal MAPbI3(x is 0.0) to the cubic-like structure of MAPbBr3 (x is 1.0) as MAPb(I1–xBrx)3 (x = 0.89–0.95) and PbI2 were formed. The bromine mole ratio x decreased as MABr thickness increased. UV-Vis absorption spectra showed that the bandgap of the thin alloy film decreased from 2.21 to 2.14 eV as x decreased. Scanning electron micrographs depicted densely packed grains that entirely covered the substrate and contained very few pinholes. The average grain size increased from 150 to 320 nm as x decreased. Electrical properties showed high charge carrier mobility that increased linearly with MABr thickness. FTO/MAPb(I1–xBrx)3/Au devices using fluorine-doped tin oxide (FTO) as substrate and gold (Au) as contacts were fabricated and current-voltage characteristics were determined. Space-charge-limited current theory was applied to charge carrier mobility and trap density of MAPb(I1–xBrx)3 thin-films. The charge carrier mobility increased as x decreased. The power conversion efficiency (PCE) of FTO/MAPbBr3/Au, FTO/MAPb(I0.11Br0.89)3/Au and FTO/MAPbI3/Au solar cells were 0.56, 0.62, and 1.15%. Devices including titanium dioxide compact layer (c-TiO2) and titanium dioxide mesoporous (m-TiO2) layer as electron transport layers were also fabricated for the application of Mott-Shottky (M-S) theory. Analyses of dark current-voltage and capacitance-voltage curves of FTO/c-TiO2/m-TiO2/MAPb(I0.11Br0.89)3 solar cells revealed a sizeable built-in voltage (Vbi) of 1.6 V and an accumulation of charge at interfaces for voltages greater than 0.2 V, respectively. Similar analyses for FTO/TiO2/MAPbI3/Au showed a small Vbi of 0.7 V and no charge carrier at interfaces. The work paves a way for reproducible growth of MAPb(I1–xBrx)3 for solar cells and sheds more light on the degree of ion migration in mixed halide and pure halide perovskites.

Enhanced charge carrier extraction by a highly ordered wrinkled MgZnO thin film for colloidal quantum dot solar cells

2017 ◽  
Vol 5 (42) ◽  
pp. 11111-11120 ◽  
Author(s):  
Xiaoliang Zhang ◽  
Ken Welch ◽  
Lei Tian ◽  
Malin B. Johansson ◽  
Leif Häggman ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Combustion Method ◽  
Low Temperature Combustion ◽  
Quantum Dot Solar Cells ◽  
Temperature Combustion ◽  
Colloidal Quantum Dot ◽  
Carrier Extraction

A highly ordered wrinkled MgZnO thin film is prepared using a low-temperature combustion method to enhance the charge carrier extraction of PbS colloidal quantum dot solar cells.

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