scholarly journals Strong In-Plane Magnetic Field-Induced Reemergent Superconductivity in the van der Waals Heterointerface of NbSe2 and CrCl3

2020 ◽  
Vol 12 (43) ◽  
pp. 49252-49257
Author(s):  
Da Jiang ◽  
Tianzhong Yuan ◽  
Yongzheng Wu ◽  
Xinyuan Wei ◽  
Gang Mu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Van Der Waals

scholarly journals Some Experimental Prospects involving Parabolic Quantum Wells

2000 ◽  
Vol 53 (1) ◽  
pp. 119 ◽  
Author(s):  
John F. Dobson ◽  
Jun Wang ◽  
Hung M. Le
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Van Der Waals ◽  
Far Infrared ◽  
Narrow Resonance ◽  
First Approximation ◽  
Spring Balance ◽  
Electron Layer ◽  
Parabolic Confinement ◽  
Parabolic Quantum Wells

We discuss two possible lines of experimental investigation based on parabolic quantum wells. In the first proposal, we note that the Generalised Kohn Theorem/Harmonic Potential Theorem forbids electron–electron damping of the Kohn mode in an electron layer gas under strictly parabolic confinement. This applies even for very strong driving. It is therefore interesting to attempt reduction of other sources of broadening in GaAlAs parabolic wells, so as to achieve a prominent narrow resonance in the far infrared. We concentrate here on phononic bandgap structures, which may be of interest for reduction of phonon effects in other systems as well. The second class of proposed experiment involves twinned parabolic wells in an attempt to observe van der Waals forces directly in GaAlAs systems. In a first approximation, the parabolic or Hooke's-law nature of the confinement allows one to use the well as a kind of spring balance to measure the weak van der Waals force. The influence of an applied magnetic field on these forces appears to be significant, and this system might provide the first measurement of such an effect.

scholarly journals Analysis of magnetic properties of A3B6 type of semiconductor crystals with metalic impurities due to their military applications

2021 ◽  
pp. 8-12
Author(s):  
Bohdan Seredyuk
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Interlayer Space ◽  
Van Der Waals ◽  
Covalent Bond ◽  
Magnetic Sensors ◽  
Metal Impurities ◽  
Semiconductor Crystals ◽  
Strong Covalent Bond ◽  
The Magnetic Field

The Earth's magnetic field is affected by the presence of heavy military armored vehicles which creates an additional magnetic moment. This distortion of the magnetic field, can be detected using magnetoresistive structures. This article touches base on the possibility of using semiconductor material such as InSe for high precision measurement of the magnetic field. The properties of InSe structures with regard to electrical, magnetic and optical characteristics are discussed. The effect of sharp anisotropy of InSe layered structure which consists in the strong covalent bond within the layers and a weak van-der-Waals bond in the interlayer space is discussed with regard to the explanation of how electrical, magnetic and optical properties are altered. The peculiarity of the spatial orientation of the material with regard to the direction of the magnetic field is considered. The impact of intercalation of InSe, GaSe by various concentrations of metal impurities such as nickel and other elements of 3d iron group is studied. Bode diagrams for pure InSe system are compared with the ones of NixInSe (for various x values). Also the effect of different temperatures ranging from room temperature to liquid nitrogen on the pattern of Bode diagrams is analyzed. The extent of how the magnetic properties of semiconductor crystals of the A3B6 type are altered by the presence of the metal impurities and their concentration is analyzed. Theoretic background for this paper is based on a well-known statement that layer structures such InSe or other A3B6 structures can be viewed as quasi two-dimensional. So, layers with strong covalent bond are formed by In-Se atoms, whereas interlayer space is filled with a weak Van der Waals bond. Within this model the processes across the layers can be described as a perturbation to the ones along the layers.  This causes a strong anisotropy of the properties of these structures. Military implication of InSe structures mentioned throughout this paper is that these structures possess magnetoresistive properties and they were proved to be useful for the components of the magnetic sensors of civil and military use. This paper also touches base on how the InSe semiconductor crystals intercalated by 3d-elements can extend the functionality of magnetic sensors designed for heavy armor detection.

VAN DER WAALS INTERACTION BETWEEN ADSORBATE LAYERS/MOLECULES AND A SUBSTRATE

2008 ◽  
Vol 18 (01) ◽  
pp. 127-135
Author(s):  
NORMAN J. MORGENSTERN HORING
Keyword(s):  
Magnetic Field ◽  
Van Der Waals ◽  
Zero Point ◽  
Theoretical Formulation ◽  
Self Energy ◽  
Adsorbate Layer ◽  
Plasma Effects ◽  
Atomic Electrons ◽  
Normal Magnetic Field

We present a theoretical formulation of van der Waals (VdW)1-19 molecule-substrate attraction in which the second order vdW energy is explicitly exhibited as a correlation/self-energy of the molecular/atomic electrons generated by a dynamic nonlocal image potential due to polarization of the electrons of the bounded metal/semiconductor substrate in the electrostatic limit.20-23 This formulation can also be applied to the vdW interaction between an adsorbate layer and the substrate, as well as the interaction between layers. We have already applied it in the case of atom-surface vdW attraction in the presence of a normal magnetic field which induces both classical and Landau quantization magnetic effects,24 incorporating the role of dynamic and nonlocal plasma effects. The extension to multiple adsorbate layers and their mutual interactions as well as their attraction to the substrate is straightforward.25 The dependence of the atom/molecule-surface vdW energy on magnetic field strength provides an adjustable parametrization of the underlying zero-point photon energy (represented in terms of the nonretarded longitudinal plasmon-photons of the Coulomb interaction), opening the possibility of analyzing the concomitant fundamental quantum phenomenology in detail with material parameters that can be examined experimentally.

scholarly journals Magnetic-Field-Induced Quantum Phase Transitions in a van der Waals Magnet

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Siwen Li ◽  
Zhipeng Ye ◽  
Xiangpeng Luo ◽  
Gaihua Ye ◽  
Hyun Ho Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Phase Transitions ◽  
Quantum Phase Transitions ◽  
Van Der Waals ◽  
Quantum Phase

scholarly journals Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Junho Seo ◽  
Eun Su An ◽  
Taesu Park ◽  
Soo-Yoon Hwang ◽  
Gi-Yeop Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Temperature ◽  
Energy Efficient ◽  
Active Component ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Spin States ◽  
Two Dimensional ◽  
High Performing ◽  
Co Doped

AbstractDiscovery of two dimensional (2D) magnets, showing intrinsic ferromagnetic (FM) or antiferromagnetic (AFM) orders, has accelerated development of novel 2D spintronics, in which all the key components are made of van der Waals (vdW) materials and their heterostructures. High-performing and energy-efficient spin functionalities have been proposed, often relying on current-driven manipulation and detection of the spin states. In this regard, metallic vdW magnets are expected to have several advantages over the widely-studied insulating counterparts, but have not been much explored due to the lack of suitable materials. Here, we report tunable itinerant ferro- and antiferromagnetism in Co-doped Fe4GeTe2 utilizing the vdW interlayer coupling, extremely sensitive to the material composition. This leads to high TN antiferromagnetism of TN ~ 226 K in a bulk and ~210 K in 8 nm-thick nanoflakes, together with tunable magnetic anisotropy. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets as an active component of vdW spintronic applications.

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