Interface State Reduction by Plasma-Enhanced Atomic Layer Deposition of Homogeneous Ternary Oxides

2020 ◽  
Vol 12 (38) ◽  
pp. 43250-43256
Author(s):  
Steven A. Vitale ◽  
Weilin Hu ◽  
Richard D’Onofrio ◽  
Tony Soares ◽  
Michael W. Geis
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Interface State ◽  
State Reduction ◽  
Layer Deposition ◽  
Ternary Oxides

scholarly journals Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

2009 ◽  
Vol 12 (4) ◽  
pp. G13 ◽  
Author(s):  
Hongtao Wang ◽  
Jun-Jieh Wang ◽  
Roy Gordon ◽  
Jean-Sébastien M. Lehn ◽  
Huazhi Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Ternary Oxides

scholarly journals Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

2018 ◽  
Author(s):  
Nuriye Kaymak ◽  
Esra Efil ◽  
Elanur Seven ◽  
Adem Tataroğlu ◽  
Sema Bilge Ocak ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Layer Deposition ◽  
P Type

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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