Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition

2020 ◽  
Author(s):  
Mika T. Westerhausen ◽  
Aleksandra T. Trycz ◽  
Connor Stewart ◽  
Milad Nonahal ◽  
Blake Regan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Color Centers ◽  
Controlled Doping

Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Nanoscale ◽  
2018 ◽  
Vol 10 (45) ◽  
pp. 21374-21385 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Hussain Alsalman ◽  
Javad G. Azadani ◽  
Nezhueyotl Izquierdo ◽  
Tony Low ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Crystal Lattice ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Tungsten Diselenide ◽  
2D Material ◽  
Substitutional Doping ◽  
P Type ◽  
Controlled Doping

Controlled doping of the p-type 2D material tungsten diselenide, done with niobium substitution for tungsten on the crystal lattice, can tune 2D transistor characteristics.

scholarly journals Large‐Scale Fabrication of Highly Emissive Nanodiamonds by Chemical Vapor Deposition with Controlled Doping by SiV and GeV Centers from a Solid Source

2019 ◽  
Vol 7 (2) ◽  
pp. 1901408 ◽  
Author(s):  
Mary De Feudis ◽  
Alexandre Tallaire ◽  
Louis Nicolas ◽  
Ovidiu Brinza ◽  
Philippe Goldner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Controlled Doping

Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal

2014 ◽  
Vol 48 (2) ◽  
pp. 268-271 ◽  
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
M. A. Baranov ◽  
A. V. Baranov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Synthetic Opal ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Diamond Particles

scholarly journals Фотолюминесценция центров окраски германий-вакансия в полученных химическим газофазным осаждением алмазных частицах

2020 ◽  
Vol 62 (5) ◽  
pp. 807
Author(s):  
С.А. Грудинкин ◽  
Н.А. Феоктистов ◽  
К.В. Богданов ◽  
А.В. Баранов ◽  
В.Г. Голубев
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Color Centers ◽  
Photoluminescence Intensity ◽  
Diamond Particles ◽  
Vapor Deposition Technique ◽  
Germanium Substrate ◽  
Hot Filament

Hot Filament Chemical Vapor Deposition technique was used to synthesize diamond particles with germanium-vacancy color centers on a germanium substrate. The formation of color centers occurred during the growth of diamond particles due to the incorporation of germanium atoms formed as a result of a crystalline germanium wafer etching with atomic hydrogen. The conditions of Chemical Vapor Deposition process which affect the photoluminescence of color centers of germanium vacancy in diamond particles, are considered. The highest photoluminescence intensity of germanium-vacancy color centers was achieved for diamond particles obtained on a substrate at a surface temperature close to the melting temperature of germanium. The photoluminescence spectra of the diamond particles also showed lines presumably associated with the optical centers which contain tungsten.

Formation of GeV, SiV, and NV Color Centers in Single Crystal Diamond Needles Grown by Chemical Vapor Deposition

2019 ◽  
Vol 256 (9) ◽  
pp. 1800721 ◽  
Author(s):  
Sergei Malykhin ◽  
Yuliya Mindarava ◽  
Rinat Ismagilov ◽  
Anton Orekhov ◽  
Fedor Jelezko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Color Centers ◽  
Single Crystal Diamond

Photoluminescence of Germanium-Vacancy Color Centers in Diamond Particles Obtained by Chemical Vapor Deposition

2020 ◽  
Vol 62 (5) ◽  
pp. 919-925
Author(s):  
S. A. Grudinkin ◽  
N. A. Feoktistov ◽  
K. V. Bogdanov ◽  
A. V. Baranov ◽  
V. G. Golubev
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Color Centers ◽  
Diamond Particles

scholarly journals Diamond nanophotonics

2012 ◽  
Vol 3 ◽  
pp. 895-908 ◽  
Author(s):  
Katja Beha ◽  
Helmut Fedder ◽  
Marco Wolfer ◽  
Merle C Becker ◽  
Petr Siyushev ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Single Photon ◽  
Collection Efficiency ◽  
Photon Emission ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Color Centers ◽  
Nitrogen Vacancy Centers

We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nitrogen–vacancy centers to plasmonic resonators, such as metallic nanoantennas. Improved photon-collection efficiency and directed emission is demonstrated by solid immersion lenses and micropillar cavities. Thereafter, the coupling of diamond nanocrystals to the guided modes of micropillar resonators is discussed along with experimental results. Finally, we present a gas-phase-doping approach to incorporate color centers based on nickel and tungsten, in situ into diamond using microwave-plasma-enhanced chemical vapor deposition. The fabrication of silicon–vacancy centers in nanodiamonds by microwave-plasma-enhanced chemical vapor deposition is discussed in addition.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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