scholarly journals Large‐Scale Fabrication of Highly Emissive Nanodiamonds by Chemical Vapor Deposition with Controlled Doping by SiV and GeV Centers from a Solid Source

2019 ◽  
Vol 7 (2) ◽  
pp. 1901408 ◽  
Author(s):  
Mary De Feudis ◽  
Alexandre Tallaire ◽  
Louis Nicolas ◽  
Ovidiu Brinza ◽  
Philippe Goldner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Controlled Doping

Structure Controlled Synthesis of Vertically Aligned Carbon Nanotubes Using Thermal Chemical Vapor Deposition Process

2010 ◽  
Vol 133 (3) ◽  
Author(s):  
Myung Gwan Hahm ◽  
Young-Kyun Kwon ◽  
Ahmed Busnaina ◽  
Yung Joon Jung
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Controlled Synthesis ◽  
Full Potential ◽  
Thermal Chemical Vapor Deposition ◽  
Vertically Aligned ◽  
Walled Carbon Nanotubes

Due to their unique one-dimensional nanostructure along with excellent mechanical, electrical, and optical properties, carbon nanotubes (CNTs) become a promising material for diverse nanotechnology applications. However, large-scale and structure controlled synthesis of CNTs still have many difficulties due to the lack of understanding of the fundamental growth mechanism of CNTs, as well as the difficulty of controlling atomic-scale physical and chemical reactions during the nanotube growth process. Especially, controlling the number of graphene wall, diameter, and chirality of CNTs are the most important issues that need to be solved to harness the full potential of CNTs. Here we report the large-scale selective synthesis of vertically aligned single walled carbon nanotubes (SWNTs) and double walled carbon nanotubes (DWNTs) by controlling the size of catalyst nanoparticles in the highly effective oxygen assisted thermal chemical vapor deposition (CVD) process. We also demonstrate a simple but powerful strategy for synthesizing ultrahigh density and diameter selected vertically aligned SWNTs through the precise control of carbon flow during a thermal CVD process.

scholarly journals Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Structures ◽  
Scale Structures ◽  
Grown Graphene

Large-Scale Thin CsPbBr3 Single-Crystal Film Grown on Sapphire via Chemical Vapor Deposition: Toward Laser Array Application

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 15605-15615
Author(s):  
Yangguang Zhong ◽  
Kun Liao ◽  
Wenna Du ◽  
Jiangrui Zhu ◽  
Qiuyu Shang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Laser Array ◽  
Single Crystal Film ◽  
Crystal Film

Control of deposition profile of Cu for large-scale integration (LSI) interconnects by plasma chemical vapor deposition

2005 ◽  
Vol 77 (2) ◽  
pp. 391-398 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masaharu Shiratani ◽  
Manabu Takeshita ◽  
Makoto Kita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Ionic Species ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Large Scale Integration ◽  
Scale Integration

H-assisted plasma chemical vapor deposition (HAPCVD) realizes control of deposition profile of Cu in trenches. The key to the control is ion irradiation to surfaces. With increasing the flux and energy of ions, the profile changes from conformal to subconformal and then to an anisotropic one, for which Cu material is filled from the bottom of the trench without deposition on the sidewall. H3+ and ArH+ are identified as the major ionic species which contribute to the control, and hence the deposition profile also depends on a ratio R = H2/(Ar + H2).

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