The Active Interface of Ta-Doped Li7La3Zr2O12 for Li Plating/Stripping Revealed by Acid Aqueous Etching

2019 ◽  
Vol 2 (9) ◽  
pp. 6720-6731 ◽  
Author(s):  
Munekazu Motoyama ◽  
Yuki Tanaka ◽  
Takayuki Yamamoto ◽  
Nobuo Tsuchimine ◽  
Susumu Kobayashi ◽  
...  
Keyword(s):  
Aqueous Etching

Aqueous Etching Produces Si(100) Surfaces of Near-Atomic Flatness: Strain Minimization Does Not Predict Surface Morphology

2009 ◽  
Vol 114 (1) ◽  
pp. 423-428 ◽  
Author(s):  
Ian T. Clark ◽  
Brandon S. Aldinger ◽  
Ankush Gupta ◽  
Melissa A. Hines
Keyword(s):  
Surface Morphology ◽  
Aqueous Etching

Nano-sized Taper Structure Formed by Wet Process Using Catalysis of Gold Nanoparticle

2007 ◽  
Vol 1059 ◽  
Author(s):  
Kensuke Nishioka ◽  
Susumu Horita
Keyword(s):  
Particle Dispersion ◽  
Smooth Transition ◽  
Au Nanoparticle ◽  
Polished Surface ◽  
Si Substrate ◽  
Wet Process ◽  
Optical Effects ◽  
A New Technique ◽  
Aqueous Etching ◽  
Dispersion Solution

ABSTRACTThis paper describes a new technique for fabrication of nano-sized taper structure formed by simple wet chemical etching using catalysis of gold (Au) nanoparticle. Single nano-sized Au particle dispersion solution was coated onto Si(111) substrate with polished surface. Then, the samples were soaked in an aqueous etching solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2). The surface of 15-min-etched Si substrate appeared black. The reflectivity of the Si substrate was reduced to below 5% throughout the entire spectrum from 300 to 800 nm owing to nano-sized taper structure called subwavelength structure (SWS). The fractional area occupied by Si as a function of the depth across the textured layer showed a smooth increase of density up to a depth. The observed optical effects are explained by the formation of a nanoscale taper structure, representing an effective medium with a smooth transition of the refractive index from that of air to that of Si.

Photogenerated Carrier Confinement During the Laser-Controlled Aqueous Etching of GaAs/AlGaAs Nultilayers

1988 ◽  
Vol 129 ◽  
Author(s):  
M.N. Ruberto ◽  
A.E. Willner ◽  
D.V. Podlesnik ◽  
R.M. Osgood
Keyword(s):  
Electrical Properties ◽  
Diffusion Length ◽  
Photogenerated Carrier ◽  
Optical And Electrical Properties ◽  
Carrier Confinement ◽  
Solution Interface ◽  
Aqueous Etching ◽  
Hole Diffusion Length

ABSTRACTThe sensitivity of the laser-controlled aqueous etching to the optical and electrical properties of semiconductors was utilized during the etching of n-GaAs/n-AlGaAs multilayers to produce novel microstructures. Since this process is controlled by the transport of photogenerated holes to the semiconductor/solution interface, we found that the morphology of etched features is dependent on the bandgap and hole diffusion length of each layer within the heterostructure.

Mechanisms of the HF/H2O Vapor Phase Etching of SiO2

1992 ◽  
Vol 35 (3) ◽  
pp. 21-26
Author(s):  
C. Helms ◽  
B. Deal
Keyword(s):  
Vapor Phase ◽  
Etch Rate ◽  
Pressure Data ◽  
Detailed Model ◽  
Wafer Temperature ◽  
Partial Pressures ◽  
Aqueous Etching ◽  
Good Agreement

In this paper we report on studies of the mechanisms responsible for HF/H2O etching and cleaning of Si surfaces. From these studies we have clearly established that the role of water is to provide a condensed solvent medium for the HF on the surface. Our results, as well as those in the literature, show that if the partial pressures of HF and H2O are too low (or sample temperature too high), condensation does not occur and little or no etching is observed. Based on these ideas, and pressure data from the literature, we have developed a detailed model that provides for the calculation of the onset of condensation as a function of wafer temperature and reactant partial pressures. In addition, the model allows determination of the HF concentration in the condensed H2O film. Comparison of etch rates obtained for aqueous etching as a function of HF concentration, and vapor phase etching as a function of calculated HF concentration, show good agreement. The vapor phase etch rate data, as a function of wafer temperature, total HF + H2O pressure, and partial pressure ratios, will be presented in detail along with information on the model.

Waveguiding effects in laser‐induced aqueous etching of semiconductors

1986 ◽  
Vol 48 (7) ◽  
pp. 496-498 ◽  
Author(s):  
Dragan V. Podlesnik ◽  
Heinz H. Gilgen ◽  
Richard M. Osgood
Keyword(s):  
Aqueous Etching

Factors controlling resolution in the laser‐induced aqueous etching of semiconductors using a focused cw beam

1991 ◽  
Vol 59 (15) ◽  
pp. 1884-1886 ◽  
Author(s):  
Shi Li ◽  
Giuseppe Scelsi ◽  
Mark N. Ruberto ◽  
Robert Scarmozzino ◽  
Richard M. Osgood
Keyword(s):  
Aqueous Etching

Ultrafast Aqueous Etching of Gallium Arsenide

1986 ◽  
Vol 75 ◽  
Author(s):  
A. E. Willner ◽  
D. V. Podlesnik ◽  
H. Gilgen ◽  
R. M. Osgood
Keyword(s):  
Hydrofluoric Acid ◽  
Room Temperature ◽  
Hydrofluoric Acid Solution ◽  
Large Area ◽  
Laser Illumination ◽  
Photochemical Etching ◽  
Order Of Magnitude ◽  
Etch Rates ◽  
Aqueous Etching ◽  
Magnitude Increase

AbstractVery rapid room-temperature photochemical etching of n-type GaAs was achieved in aqueous hydrofluoric acid in conjunction with ultraviolet laser illumination. The etch rates of ˜500 μm/min represent an order of magnitude increase in etch rates over previously reported results for solutions that contained no hydrofluoric acid. Furthermore, incorporation of nitric acid into the hydrofluoric acid solution resulted in smooth etched surfaces thus allowing deep, waveguiding etching. This rapid process was used to etch deep, large-area structures in GaAs samples.

Sign in / Sign up

Export Citation Format

Share Document