Understanding the Intrinsic P-Type Behavior and Phase Stability of Thermoelectric α-Mg3Sb2

2018 ◽  
Vol 1 (11) ◽  
pp. 6600-6608 ◽  
Author(s):  
XiaoYu Chong ◽  
Pin-Wen Guan ◽  
Yi Wang ◽  
Shun-Li Shang ◽  
Jorge Paz Soldan Palma ◽  
...  
Keyword(s):  
Phase Stability ◽  
P Type

scholarly journals Correction to “Understanding the Intrinsic P-Type Behavior and Phase Stability of Thermoelectric α-Mg3Sb2”

2020 ◽  
Vol 3 (1) ◽  
pp. 1249-1252
Author(s):  
XiaoYu Chong ◽  
Pin-Wen Guan ◽  
Yi Wang ◽  
Shun-Li Shang ◽  
Jorge Paz Soldan Palma ◽  
...  
Keyword(s):  
Phase Stability ◽  
P Type

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

Phase stability and structural properties of Fe2S and its analog Co2P at high pressures and temperatures

2021 ◽  
Author(s):  
Claire Zurkowski ◽  
Barbara Lavina ◽  
Stella Chariton ◽  
Eran Greenberg ◽  
Sergey Tkachev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Structural Properties ◽  
Phase Stability ◽  
Hexagonal Lattice ◽  
Outer Core ◽  
S Phase ◽  
X Ray Diffraction ◽  
Compression Behavior ◽  
X Ray ◽  
P Type

<p>Earth’s core is a Fe-rich alloy with a significant contribution from cosmochemically abundant light elements such as sulfur. Understanding the phase stability and structural properties of iron-rich sulfides at core conditions is critical for assessing the core’s composition and dynamics. In the current study, we examined the high-pressure polymorphism of Fe<sub>2</sub>S coexisting with Fe to outer-core pressures and high temperatures by combining in-situ powder and single-crystal X-ray diffraction techniques. We further conducted single-crystal X-ray diffraction experiments on Co<sub>2</sub>P as a low-pressure analog of Fe<sub>2</sub>S. Analyses of the powder X-ray diffraction patterns indicate an orthorhombic Fe<sub>2</sub>S phase coexisting with Fe between 25 and 170 GPa at moderate temperatures. Above  85 GPa, the orthorhombic Fe<sub>2</sub>S phase transitions to a hexagonal lattice that is stable on the liquidus to 140 GPa. Using single-crystal diffraction techniques, the orthorhombic structure of Fe<sub>2</sub>S was solved and refined to the <em>C</em>23 structure (Co<sub>2</sub>P type, <em>Pnma</em>, <em>Z</em>=4) at 90 GPa and quenched from 2380 K. While upon quenching at 100 GPa from 2650 K, a hexagonal lattice was identified and indexed to a unit cell compatible with a <em>C</em>22 Fe<sub>2</sub>S phase (Fe<sub>2</sub>P type, <em>P</em>-62<em>m</em>, <em>Z</em>=3), confirming the phase relations inferred in our powder diffraction experiments. The <em>C</em>23 Fe<sub>2</sub>S unit-cell parameters fit between 25 and 170 GPa reveal a highly compressible <em>a</em> axis, where the <em>a</em> axis is about 3 times more compressible than the <em>b</em> and <em>c</em> axes. To 48 GPa,<em> C</em>23 Co<sub>2</sub>P shows analogous anisotropic compression behavior to that observed at higher pressures in <em>C</em>23 Fe<sub>2</sub>S. Structural analysis of Co<sub>2</sub>P demonstrates that the anisotropic compression of these C23 phases is attributable to bond angle distortion and bond length compression parallel to the <em>a </em>direction and that the Co<sub>2</sub>P-type structure is compressing towards a Co<sub>2</sub>Si-type structure. These results display the mechanism for anisotropic compression observed in <em>C</em>23 Fe<sub>2</sub>S and support previous observations of a <em>C</em>37-like Fe<sub>2</sub>S phase above 190 GPa. Through this work, we determined that Fe<sub>2</sub>S is the relevant Fe-rich sulfide to at least outer core pressures and high temperatures and assessment of the phase transition and compression behavior of the Fe<sub>2</sub>S and Co<sub>2</sub>P analogs provides insight into the material properties and dynamics of Earth’s complex core.</p>

Effect of Vacancy-Site Occupation in Half-Heusler Compound ZrNiSn on Phase Stability and Thermoelectric Properties

2011 ◽  
Vol 1295 ◽  
Author(s):  
Yoshisato Kimura ◽  
Toshiyasu Tanoguchi ◽  
Yasuhiro Sakai ◽  
Yaw-Wang Chai ◽  
Yoshinao Mishima
Keyword(s):  
Phase Stability ◽  
Phonon Scattering ◽  
Stoichiometric Composition ◽  
Two Phase ◽  
Metallic Behavior ◽  
Heusler Compound ◽  
Heusler Phase ◽  
Vacancy Site ◽  
Co Addition ◽  
P Type

ABSTRACTThe half-Heusler compound ZrNiSn has a quite small solubility for Ni from the stoichiometric composition towards the Ni-rich direction since Ni atoms are not supposed to occupy the vacancy-site. Nevertheless, Co and Ir atoms preferably occupy the vacancy-site of ZrNiSn, which is contrary to the prediction that they would substitute for Ni sites. This implies that the phase stability of the compound gradually changes toward that of the Heusler compound Zr(Ni,M)2Sn (M = Co, Ir). It has been confirmed that there exists a two-phase field between half-Heusler Zr(Ni,Cox)Sn and Heusler Zr(Ni,Co)2Sn. The n-type thermoelectric property of ZrNiSn can be converted to p-type by the addition of Co and Ir within the compositional range of the half-Heusler phase. The occupation of vacancy sites by Co and Ir atoms leads to a drastic reduction in the thermal conductivity owing to the enhancement of phonon scattering. With further Co addition, the Heusler phase Zr(Ni,Co)2Sn alloys show metallic behavior.

Chemical manipulation of phase stability and electronic behavior in Cu4−xAgxSe2

2018 ◽  
Vol 6 (16) ◽  
pp. 6997-7004 ◽  
Author(s):  
A. Olvera ◽  
T. P. Bailey ◽  
C. Uher ◽  
P. F. P. Poudeu
Keyword(s):  
Phase Stability ◽  
Electronic Transport ◽  
Phase Segregation ◽  
Chemical Substitution ◽  
P Type ◽  
Electronic Behavior

Gradual stoichiometric chemical substitution of Cu by Ag in the p-type Cu2Se phase enables phase segregation and incremental switching of the electronic transport to n-type behavior for large Ag/Cu ratios.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Tuning the phase stability and surface HER activity of 1T′-MoS2 by covalent chemical functionalization

2020 ◽  
Vol 8 (44) ◽  
pp. 15852-15859
Author(s):  
Jiu Chen ◽  
Fuhua Li ◽  
Yurong Tang ◽  
Qing Tang
Keyword(s):  
Phase Stability ◽  
Chemical Functionalization ◽  
The Stability

Chemical functionalization can significantly improve the stability of meta-stable 1T′-MoS2 and tune the surface HER activity.

Investigating the functional link between TMEM165 and SPCA1

2019 ◽  
Vol 476 (21) ◽  
pp. 3281-3293 ◽  
Author(s):  
Elodie Lebredonchel ◽  
Marine Houdou ◽  
Hans-Heinrich Hoffmann ◽  
Kateryna Kondratska ◽  
Marie-Ange Krzewinski ◽  
...  
Keyword(s):  
Subcellular Localization ◽  
Complete Loss ◽  
Protein Family ◽  
Uncharacterized Protein ◽  
Functional Link ◽  
P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

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