Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

Nila Pal; Anand Sharma; Vishwas Acharya; Nitesh K. Chourasia; Sajal Biring; Bhola N. Pal

doi:10.1021/acsaelm.9b00641

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

ACS Applied Electronic Materials ◽

10.1021/acsaelm.9b00641 ◽

2019 ◽

Vol 2 (1) ◽

pp. 25-34 ◽

Cited By ~ 3

Author(s):

Nila Pal ◽

Anand Sharma ◽

Vishwas Acharya ◽

Nitesh K. Chourasia ◽

Sajal Biring ◽

...

Keyword(s):

Metal Oxide ◽

Interface Engineering ◽

Ion Conducting ◽

Transistor Fabrication

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Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion-Conducting Gate Dielectric

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.9b04045 ◽

2019 ◽

Vol 123 (33) ◽

pp. 20278-20286 ◽

Cited By ~ 6

Author(s):

Anand Sharma ◽

Nitesh K. Chourasia ◽

Nila Pal ◽

Sajal Biring ◽

Bhola N. Pal

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Metal Oxide Thin Film ◽

Ion Conducting ◽

Electron Donation

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Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Solid State Communications ◽

10.1016/j.ssc.2011.09.033 ◽

2011 ◽

Vol 151 (24) ◽

pp. 1881-1884 ◽

Cited By ~ 25

Author(s):

Souvik Kundu ◽

T. Shripathi ◽

P. Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Engineering ◽

Interface Passivation

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(Invited) Interface Engineering in Transition-Metal Oxide Electrode Materials for Sodium Ion Batteries

ECS Meeting Abstracts ◽

10.1149/ma2020-02125mtgabs ◽

2020 ◽

Vol MA2020-02 (1) ◽

pp. 25-25

Author(s):

Claire Xiong ◽

Changjian Deng ◽

Eric Gabriel ◽

Chunrong Ma ◽

Yingying Xie ◽

...

Keyword(s):

Transition Metal ◽

Metal Oxide ◽

Electrode Materials ◽

Transition Metal Oxide ◽

Sodium Ion ◽

Sodium Ion Batteries ◽

Interface Engineering ◽

Oxide Electrode

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Interface engineering for Ge metal-oxide–semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2006.11.129 ◽

2007 ◽

Vol 515 (16) ◽

pp. 6337-6343 ◽

Cited By ~ 77

Author(s):

A. Dimoulas ◽

D.P. Brunco ◽

S. Ferrari ◽

J.W. Seo ◽

Y. Panayiotatos ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Engineering

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Importance of interface engineering for synthesis of SrHfO3perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal–oxide–semiconductor capacitors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ea03 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EA03 ◽

Cited By ~ 2

Author(s):

Shinji Migita ◽

Yukinori Morita ◽

Meishoku Masahara ◽

Hiroyuki Ota

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Interface Engineering ◽

Amorphous Films ◽

Si Substrates ◽

And Control

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Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Nature Communications ◽

10.1038/ncomms1602 ◽

2011 ◽

Vol 2 (1) ◽

Cited By ~ 319

Author(s):

Di Xiao ◽

Wenguang Zhu ◽

Ying Ran ◽

Naoto Nagaosa ◽

Satoshi Okamoto

Keyword(s):

Transition Metal ◽

Metal Oxide ◽

Quantum Hall ◽

Transition Metal Oxide ◽

Interface Engineering ◽

Oxide Heterostructures ◽

Quantum Hall Effects ◽

Hall Effects ◽

Digital Transition

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Interface engineering between metal electrode and GeO2 dielectric for future Ge-based metal-oxide-semiconductor technologies

Applied Physics Letters ◽

10.1063/1.4766745 ◽

2012 ◽

Vol 101 (20) ◽

pp. 201601 ◽

Cited By ~ 8

Author(s):

Shingo Ogawa ◽

Iori Hideshima ◽

Yuya Minoura ◽

Takashi Yamamoto ◽

Asami Yasui ◽

...

Keyword(s):

Metal Oxide ◽

Metal Electrode ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Engineering

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Tetranuclear yttrium and gadolinium 2-acetylcyclopentanoate clusters: Synthesis and their use as spin-coating precursors for metal oxide film formation for field-effect transistor fabrication

Journal of Rare Earths ◽

10.1016/j.jre.2018.02.010 ◽

2018 ◽

Vol 36 (10) ◽

pp. 1098-1105 ◽

Cited By ~ 1

Author(s):

Elaheh Pousaneh ◽

Andrea Preuβ ◽

Khaybar Assim ◽

Tobias Rüffer ◽

Marcus Korb ◽

...

Keyword(s):

Oxide Film ◽

Metal Oxide ◽

Spin Coating ◽

Field Effect ◽

Field Effect Transistor ◽

Film Formation ◽

Effect Transistor ◽

Transistor Fabrication ◽

Metal Oxide Film

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Interface Engineering of Metal‐Oxide Field‐Effect Transistors for Low‐Drift pH Sensing

Advanced Materials Interfaces ◽

10.1002/admi.202100314 ◽

2021 ◽

pp. 2100314

Author(s):

Huihui Ren ◽

Kun Liang ◽

Dingwei Li ◽

Momo Zhao ◽

Fanfan Li ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ph Sensing ◽

Interface Engineering ◽

Low Drift

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Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.10.163 ◽

2019 ◽

Vol 777 ◽

pp. 1124-1132 ◽

Cited By ~ 8

Author(s):

Nitesh K. Chourasia ◽

Anand Sharma ◽

Vishwas Acharya ◽

Nila Pal ◽

Sajal Biring ◽

...

Keyword(s):

Metal Oxide ◽

Band Gap ◽

Gate Dielectric ◽

Low Voltage ◽

Solution Processed ◽

Low Band Gap ◽

Ion Conducting

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