Low-Leakage Fiber-Based Field-Effect Transistors with an Al2O3–MgO Nanolaminate as Gate Insulator

2019 ◽  
Vol 1 (8) ◽  
pp. 1400-1407 ◽  
Author(s):  
Jeong Woo Park ◽  
Seonil Kwon ◽  
Jeong Hyun Kwon ◽  
Chan Young Kim ◽  
Kyung Cheol Choi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Low Leakage

scholarly journals Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors

Nano Letters ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 4431-4439 ◽  
Author(s):  
J. G. Gluschke ◽  
J. Seidl ◽  
R. W. Lyttleton ◽  
D. J. Carrad ◽  
J. W. Cochrane ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator

Ionic Impurities in Poly(vinyl alcohol) Gate Dielectrics and Hysteresis Effects in Organic Field Effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Martin Egginger ◽  
Mihai Irimia-Vladu ◽  
Reinhard Schwödiauer ◽  
Andreas Tanda ◽  
Siegfried Bauer ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Field Effect ◽  
Water Solubility ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Poly Vinyl Alcohol ◽  
Organic Field Effect Transistors ◽  
Electronic Circuits ◽  
Metal Insulator Metal ◽  
Ionic Impurities

AbstractPoly(vinyl alcohol) (PVA) is a water based dielectric often used as a coating layer in paper industry. Due to its water solubility PVA is also interesting as gate insulator in organic field effect transistors. Depending on the preparation of the PVA gate, transistors with and without hysteresis can be produced, with applications in organic electronic circuits or memory elements. In the production of PVA, a major side product is sodium acetate, an ionic salt not completely removed during industrial purification. Such ionic impurities likely influence the hysteresis in PVA based organic field effect transistors. While a hysteresis is desirable in memory elements it is unwanted in transistors for electronic circuits. Ways to prepare transistors with a desired transfer characteristic are described, for example by using electronic grade products directly from the purchaser of PVA, or by employing PVA purified by means of dialysis. Measurements are performed with metal-insulator-metal (MIM) structures and organic field effect transistors (OFETs), where Buckminsterfullerene C60 is employed as organic semiconductor.

Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

2007 ◽  
Vol 544-545 ◽  
pp. 753-756
Author(s):  
In Jae Back ◽  
Su Cheol Gong ◽  
Hun Seoung Lim ◽  
Ik Sub Shin ◽  
Seoung Woo Kuk ◽  
...  
Keyword(s):  
Active Layer ◽  
Glass Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Semiconductor Films ◽  
Insulation Property ◽  
Ito Glass ◽  
Lower Mobility

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

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