Organic field-effect transistors based on low-temperature processable transparent polymer dielectrics with low leakage current

2012 ◽  
Vol 13 (5) ◽  
pp. 733-736 ◽  
Author(s):  
Jing Zhang ◽  
Hongfei Zhu ◽  
Lei Zhang ◽  
Chong-an Di ◽  
Wei Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Low Leakage ◽  
Polymer Dielectrics ◽  
Low Leakage Current

A facile route for the fabrication of large-scale gate-all-around nanofluidic field-effect transistors with low leakage current

Lab on a Chip ◽  
2012 ◽  
Vol 12 (14) ◽  
pp. 2568 ◽  
Author(s):  
Sangwoo Shin ◽  
Beom Seok Kim ◽  
Jiwoon Song ◽  
Hwanseong Lee ◽  
Hyung Hee Cho
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Facile Route

Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

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