Temperature-Dependent Magnetic Domain Evolution in Noncollinear Ferrimagnetic FeV2O4 Thin Films

2019 ◽  
Vol 1 (6) ◽  
pp. 817-822 ◽  
Author(s):  
Dohyung Kim ◽  
Dongyi Zhou ◽  
Songbai Hu ◽  
Dieu Hien Thi Nguyen ◽  
Nagarajan Valanoor ◽  
...  
2017 ◽  
Vol 111 (21) ◽  
pp. 212401 ◽  
Author(s):  
X. H. Liu ◽  
W. Liu ◽  
Z. M. Dai ◽  
S. K. Li ◽  
T. T. Wang ◽  
...  

2000 ◽  
Vol 87 (9) ◽  
pp. 5472-5474 ◽  
Author(s):  
A. Marty ◽  
Y. Samson ◽  
B. Gilles ◽  
M. Belakhovsky ◽  
E. Dudzik ◽  
...  

Author(s):  
B. G. Demczyk

CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.


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