Molecular Dynamics Study of Heteroepitaxial Growth of HgCdTe on Perfect and Dislocated (211)B CdZnTe Substrates

2021 ◽  
Author(s):  
Nigel Hew ◽  
Dino Spagnoli ◽  
Lorenzo Faraone
Keyword(s):  
Molecular Dynamics ◽  
Heteroepitaxial Growth ◽  
Cdznte Substrates

scholarly journals Molecular dynamics simulation of aluminum nitride deposition: temperature and N : Al ratio effects

2018 ◽  
Vol 5 (8) ◽  
pp. 180629 ◽  
Author(s):  
Libin Zhang ◽  
Han Yan ◽  
Guo Zhu ◽  
Sheng Liu ◽  
Zhiyin Gan
Keyword(s):  
Molecular Dynamics ◽  
Aluminum Nitride ◽  
Flux Ratio ◽  
Biaxial Stress ◽  
Dynamics Simulation ◽  
Heteroepitaxial Growth ◽  
Good Crystallinity ◽  
Aln Film ◽  
Dynamics Simulations ◽  
Deposited Film

Heteroepitaxial growth of aluminum nitride (AIN) has been explored by experiments, but the corresponding growth mechanism is still unrevealed. Here, we use molecular dynamics simulations to study effects of temperature and N : Al flux ratio on deposited AlN. When the temperature increases from 1000 K to 2000 K with an N : Al flux ratio of 2.0, the growth rate of the AlN film decreases. The crystallinity of the deposited AlN is distinctly improved as the temperature increases from 1000 K to 1800 K and it becomes saturated between 1800 K and 2000 K. The crystallinity of the deposited film at 1800 K increases with an increase in the N : Al flux ratio from 0.8 to 2.4, and this degraded a little at an N : Al flux ratio of 2.8. In addition, stoichiometry is closely related to crystallinity of deposited films. Film with good crystallinity is connected with a near 50% N fraction. Furthermore, the average mean biaxial stress and mean normal stress at 1800 K with N : Al flux ratios of 2.0, 2.4 and 2.8 are calculated, indicating that the deposited film with lowest stress has the best crystal quality and the defects appear where stresses occur.

scholarly journals Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

2017 ◽  
Vol 121 (19) ◽  
pp. 195301 ◽  
Author(s):  
J. Gruber ◽  
X. W. Zhou ◽  
R. E. Jones ◽  
S. R. Lee ◽  
G. J. Tucker
Keyword(s):  
Molecular Dynamics ◽  
Defect Formation ◽  
Heteroepitaxial Growth ◽  
Ingan Alloys

Layer-by-layer heteroepitaxial growth process of a BaO layer on SrTiO3(001) as investigated by molecular dynamics

1998 ◽  
Vol 109 (20) ◽  
pp. 9148-9154 ◽  
Author(s):  
Momoji Kubo ◽  
Yasunori Oumi ◽  
Ryuji Miura ◽  
Andras Stirling ◽  
Akira Miyamoto ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Growth Process ◽  
Layer By Layer ◽  
Heteroepitaxial Growth

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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