scholarly journals Correction to “Electrical Control of Lifetime-Limited Quantum Emitters Using 2D Materials”

Nano Letters ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 4815-4815 ◽  
Author(s):  
Kevin G. Schädler ◽  
Carlotta Ciancico ◽  
Sofia Pazzagli ◽  
Pietro Lombardi ◽  
Adrian Bachtold ◽  
...  
Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 3789-3795 ◽  
Author(s):  
Kevin G. Schädler ◽  
Carlotta Ciancico ◽  
Sofia Pazzagli ◽  
Pietro Lombardi ◽  
Adrian Bachtold ◽  
...  

2021 ◽  
Vol 118 (24) ◽  
pp. 240502
Author(s):  
Shaimaa I. Azzam ◽  
Kamyar Parto ◽  
Galan Moody

ACS Photonics ◽  
2017 ◽  
Vol 4 (4) ◽  
pp. 761-767 ◽  
Author(s):  
Andreas W. Schell ◽  
Hideaki Takashima ◽  
Toan Trong Tran ◽  
Igor Aharonovich ◽  
Shigeki Takeuchi

Author(s):  
Igor Aharonovich ◽  
Milos Toth ◽  
Alexander S. Solntsev

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2634-2639 ◽  
Author(s):  
Toan Trong Tran ◽  
Danqing Wang ◽  
Zai-Quan Xu ◽  
Ankun Yang ◽  
Milos Toth ◽  
...  

2021 ◽  
Author(s):  
Simon White ◽  
Tieshan Yang ◽  
Nikolai Dontschuk ◽  
Chi Li ◽  
Zaiquan Xu ◽  
...  

Abstract Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies1, 2. Recently, hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters3-7. However, the large band gap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in an hBN–graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly-coherent source with linewidths of ~ 160 MHz. Our results enhance the potential of hBN for tunable solid state quantum emitters for the growing field of quantum information science.


2019 ◽  
Vol 116 (14) ◽  
pp. 6586-6593 ◽  
Author(s):  
Ke Zhang ◽  
Yang Wei ◽  
Jin Zhang ◽  
He Ma ◽  
Xinhe Yang ◽  
...  

Low-dimensional nanomaterials, such as one-dimensional (1D) nanomaterials and layered 2D materials, have exhibited significance for their respective unique electronic and optoelectronic properties. Here we show that a mixed-dimensional heterostructure with building blocks from multiple dimensions will present a synergistic effect on photodetection. A carbon nanotube (CNT)–WSe2–graphene photodetector is representative on this issue. Its spatial resolution can be electrically switched between high-resolution mode (HRM) and low-resolution mode (LRM) revealed by scanning photocurrent microscopy (SPCM). The reconfigurable spatial resolution can be attributed to the asymmetric geometry and the gate-tunable Fermi levels of these low-dimensional materials. Significantly, an interference fringe with 334 nm in period was successfully discriminated by the device working at HRM, confirming the efficient electrical control. Electrical control of spatial resolution in CNT–WSe2–graphene devices reveals the potential of the mixed-dimensional architectures in future nanoelectronics and nano-optoelectronics.


2021 ◽  
Vol 3 (4) ◽  
pp. 615-642
Author(s):  
Morteza Sasani Ghamsari

Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development of chip-scale quantum emitters. It seems that the next step towards the practical application of quantum emitters is to generate position-controlled quantum light sources. Among developed processes, it can be recognized that droplet–epitaxial QD growth has a promising future for the preparation of chip-scale quantum emitters.


Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.


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