Isoindigo-Based Semiconducting Polymers Using Carbosilane Side Chains for High Performance Stretchable Field-Effect Transistors

2016 ◽  
Vol 49 (22) ◽  
pp. 8540-8548 ◽  
Author(s):  
Hung-Chin Wu ◽  
Chih-Chien Hung ◽  
Chian-Wen Hong ◽  
Han-Sheng Sun ◽  
Jau-Tzeng Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Side Chains

Tunable charge-transport polarity in thienothiophene–bisoxoindolinylidene-benzodifurandione copolymers for high-performance field-effect transistors

2021 ◽  
Author(s):  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Yankai Zhou ◽  
Xuyang Wei ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Structural Parameters ◽  
Semiconducting Polymers ◽  
Trade Off ◽  
Polymer Semiconductor ◽  
And Performance

N-type semiconducting polymers are important materials for modern electronics but limited in variety and performance. To design a new n-type polymer semiconductor requires a judicious trade-off between structural parameters involving...

Colloids of semiconducting polymers for high-performance, environment-friendly polymer field effect transistors

2015 ◽  
Vol 24 ◽  
pp. 160-164 ◽  
Author(s):  
Jangwhan Cho ◽  
Kwang Hee Cheon ◽  
Kwang Hun Park ◽  
Soon-Ki Kwon ◽  
Yun-Hi Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Environment Friendly

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

2015 ◽  
Vol 3 (41) ◽  
pp. 10892-10897 ◽  
Author(s):  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Zupan Mao ◽  
Man Shing Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Angular-shaped benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy side-chains were synthesized, and an OFET device based on BDTT-4 exhibited a high carrier mobility of up to 2.6 cm2V−1s−1.

Solution processed 1D polymer/SWCNT composite arrays for high-performance field effect transistors

2021 ◽  
Author(s):  
Xiaoyu Fan ◽  
Jingrun Yang ◽  
Bo Lei ◽  
Zhenghao Yang ◽  
Pengda Che ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Large Area ◽  
Solution Processed

Semiconducting polythiophene polymers are promising materials for the generation of large-area and flexible electronics. However, field effect transistors (FETs) using semiconducting polymers as the channel material possess relatively poor mobility,...

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Field-Effect Transistors: Highly π-Extended Copolymers with Diketopyrrolopyrrole Moieties for High-Performance Field-Effect Transistors (Adv. Mater. 34/2012)

2012 ◽  
Vol 24 (34) ◽  
pp. 4589-4589 ◽  
Author(s):  
Huajie Chen ◽  
Yunlong Guo ◽  
Gui Yu ◽  
Yan Zhao ◽  
Ji Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors
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