Temperature-Dependent Band Gap in Two-Dimensional Perovskites: Thermal Expansion Interaction and Electron–Phonon Interaction

2019 ◽  
Vol 10 (10) ◽  
pp. 2546-2553 ◽  
Author(s):  
Shuai Wang ◽  
Jiaqi Ma ◽  
Wancai Li ◽  
Jun Wang ◽  
Haizhen Wang ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Band Gap ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

Correlation-renormalized electron-phonon interaction in the two-dimensional Hubbard model

1999 ◽  
Vol 60 (14) ◽  
pp. 10442-10446 ◽  
Author(s):  
M. Mierzejewski ◽  
J. Zieliński ◽  
P. Entel
Keyword(s):  
Hubbard Model ◽  
Two Dimensional ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Temperature-dependent dielectric loss in BaTiO3: Competition between tunnelling probability and electron-phonon interaction

2021 ◽  
Vol 257 ◽  
pp. 123792
Author(s):  
Aanchal Sati ◽  
Anil Kumar ◽  
Vikash Mishra ◽  
Kamal Warshi ◽  
Preeti Pokhriyal ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

scholarly journals Bilayer graphene: physics and application outlook in photonics

Nanophotonics ◽  
2015 ◽  
Vol 4 (1) ◽  
pp. 115-127 ◽  
Author(s):  
Hugen Yan
Keyword(s):  
Layered Materials ◽  
Bilayer Graphene ◽  
Layered Material ◽  
Two Dimensional ◽  
Fano Resonances ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Basic Physics ◽  
Gap Opening ◽  
Plasmon Interaction

AbstractLayered materials, such as graphene, transition metal dichacogenides and black phosphorus have attracted lots of attention recently. They are emerging novel materials in electronics and photonics, with tremendous potential in revolutionizing the traditional electronics and photonics industry. Marrying layered material to the nanophotonics is being proved fruitful. With the recent emphasis and development of metasurfaces in nanophotonics, atomically thin materials can find their unique position and strength in this field. In this article, I will focus on one specific two dimensional material: bilayer graphene. Basic physics will be reviewed, such as band-gap opening, electron-phonon interaction, phonon-plasmon interaction and Fano resonances in the optical response. Moreover, I will review the application of bilayer graphene as a sensitive and fast photodetector. An outlook will be given in the final part of the paper.

scholarly journals Фотоэлектрические свойства монокристаллов MnGaInS-=SUB=-4-=/SUB=-

2020 ◽  
Vol 90 (3) ◽  
pp. 427
Author(s):  
Н.Н. Нифтиев
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Band Gap ◽  
Wavelength Range ◽  
Spectral Distribution ◽  
Manganese Deficiency ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Acceptor Defect

The spectral distribution of photoconductivity and the temperature dependence of the photocurrent of monocrystals MnGaInS4 are studied. The intrinsic and extrinsic photoconductivities are revealed in the spectrum of photoconductivity. The wavelength range of 0.640–0.760 μm is shown when manganese deficiency in crystals appears and is due to an acceptor defect. The temperature dependence of the band gap in the monocrystals MnGaInS4 is related to the electron – phonon interaction. In the studied temperatures, increase in the photocurrent is associated with the thermal depletion of the attachment levels. The activation energy of the attachment levels is estimated.

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