High-precision determination of the temperature-dependent band-gap shrinkage due to the electron-phonon interaction in GaAs

2000 ◽  
Vol 61 (23) ◽  
pp. 15812-15816 ◽  
Author(s):  
D. Lüerßen ◽  
R. Bleher ◽  
H. Kalt
2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.


2015 ◽  
Vol 115 (9) ◽  
Author(s):  
Martin Hoferichter ◽  
Jacobo Ruiz de Elvira ◽  
Bastian Kubis ◽  
Ulf-G. Meißner

2011 ◽  
Author(s):  
Jan C. Bernauer ◽  
Atsushi Hosaka ◽  
Kanchan Khemchandani ◽  
Hideko Nagahiro ◽  
Kanabu Nawa ◽  
...  

1998 ◽  
Vol 57 (2) ◽  
pp. R1215-R1218 ◽  
Author(s):  
Sergio Caracciolo ◽  
Maria Serena Causo ◽  
Andrea Pelissetto

2020 ◽  
Vol 35 (5) ◽  
pp. 953-960
Author(s):  
Wen-Gang Liu ◽  
Shuang Wei ◽  
Jian Zhang ◽  
Cong Ao ◽  
Fu-Tian Liu ◽  
...  

A new separation method for Sr involving HF coprecipitation combined with AG50 resin from samples with high Rb/Sr ratios.


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