Optical Signatures of Impurity–Impurity Interactions in Copper Containing II–VI Alloy Semiconductors

2018 ◽  
Vol 9 (3) ◽  
pp. 635-640 ◽  
Author(s):  
Biswajit Bhattacharyya ◽  
Kushagra Gahlot ◽  
Ranjani Viswanatha ◽  
Anshu Pandey
Keyword(s):  
Alloy Semiconductors

Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE

1989 ◽  
Vol 98 (1-2) ◽  
pp. 118-126 ◽  
Author(s):  
Hisashi Seki ◽  
Akinori Koukitu
Keyword(s):  
Alloy Semiconductors

scholarly journals Crystalline microstructure of alloy semiconductors.

1988 ◽  
Vol 30 (6) ◽  
pp. 311-321
Author(s):  
Akio SASAKI ◽  
Masaya ICHIMURA
Keyword(s):  
Alloy Semiconductors ◽  
Crystalline Microstructure

Alloy semiconductors

1964 ◽  
Vol 1 ◽  
pp. 275-315 ◽  
Author(s):  
J.C. Woolley
Keyword(s):  
Alloy Semiconductors

Solid-liquid equilibria for III–V quinary alloy semiconductors

1997 ◽  
Vol 103 (7) ◽  
pp. 417-420 ◽  
Author(s):  
Ziliang Xu ◽  
Wanjing Xu ◽  
Sheng Lan ◽  
Li Li ◽  
Chengqing Yang ◽  
...  
Keyword(s):  
Alloy Semiconductors ◽  
Solid Liquid

scholarly journals DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

2019 ◽  
Vol 26 (2) ◽  
pp. 127-132
Author(s):  
Xuewen WANG ◽  
Wenwen LIU ◽  
Chunxue ZHAI ◽  
Jiangni YUN ◽  
Zhiyong ZHANG
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Electronic Structure ◽  
Density Functional ◽  
Dft Calculation ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Photoelectric Performance ◽  
The Density Functional Theory ◽  
Alloy Semiconductors

Using the density functional theory (DFT) of the first principle and Generalized gradient approximation method, the electronic structures and optical properties of the InxGa1-xN crystals with different x (x = 0.25, 0.5, 0.75, 1) have been calculated in this paper. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of complex dielectric function, absorption spectrum and transitivity. With the increase of x, the computational result shows that the optical band gap (i.e.Eg) of the InxGa1-xN crystal tends to be narrow, then the absorption spectrum shifts to the low-energy direction. And the Fermi energy slightly moves to the bottom of conduction band which would cause the growth of conductivity by increasing x. In a word, the InxGa1-xN compound can be achieved theoretically the adjustable Eg and photoelectric performance with x, which will be used in making various optoelectronic devices including solar cell and sensors.

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