Effect of molecular size and hydrogen bonding on three surface-facilitated processes in molecular glasses: Surface diffusion, surface crystal growth, and formation of stable glasses by vapor deposition

2019 ◽  
Vol 150 (2) ◽  
pp. 024502 ◽  
Author(s):  
Yinshan Chen ◽  
Zhenxuan Chen ◽  
Michael Tylinski ◽  
M. D. Ediger ◽  
Lian Yu
2017 ◽  
Vol 121 (29) ◽  
pp. 7221-7227 ◽  
Author(s):  
Yinshan Chen ◽  
Men Zhu ◽  
Audrey Laventure ◽  
Olivier Lebel ◽  
M. D. Ediger ◽  
...  

2014 ◽  
Vol 118 (27) ◽  
pp. 7638-7646 ◽  
Author(s):  
Mariko Hasebe ◽  
Daniele Musumeci ◽  
C. Travis Powell ◽  
Ting Cai ◽  
Erica Gunn ◽  
...  

2016 ◽  
Vol 120 (32) ◽  
pp. 8007-8015 ◽  
Author(s):  
Yinshan Chen ◽  
Wei Zhang ◽  
Lian Yu

2016 ◽  
Vol 145 (6) ◽  
pp. 064503 ◽  
Author(s):  
Shigang Ruan ◽  
Wei Zhang ◽  
Ye Sun ◽  
M. D. Ediger ◽  
Lian Yu

2021 ◽  
Author(s):  
Fajar Inggit Pambudi ◽  
Michael William Anderson ◽  
Martin Attfield

Atomic force microscopy has been used to determine the surface crystal growth of two isostructural metal-organic frameworks, [Zn2(ndc)2(dabco)] (ndc = 1,4-naphthalene dicarboxylate, dabco = 4-diazabicyclo[2.2.2]octane) (1) and [Cu2(ndc)2(dabco)] (2) from...


1992 ◽  
Vol 280 ◽  
Author(s):  
F. L. Metcalfe ◽  
J. A. Venables

ABSTRACTCrystal growth and surface diffusion have been studied in the Ag/Ge(lll) system using UHV-SEM based techniques, biassed secondary electron imaging (b-SEI), micro-AES and RHEED. Ag was deposited through and past a mask of holes held close to the substrate at 300<Td< 775K. Under certain conditions, the Ag patches were observed to split into two regions corresponding to the √3×√3R30° (hereafter √3) and a lower coverage 4×4 structure, each of which were easily observable using b-SEI. These patch widths were measured as a function of Td, and of annealing times at temperatures Ta, and effective diffusion coefficents extracted. The diffusion length of adatoms over the 4×4 structure is larger than that over the √3 structure. These observations are modelled using kinetic rate equations, and the results are compared with previous studies of Ag/Si(111). We find that energies characterising processes on top of the √3 layers of both systems are very similar, but that processes involved in the formation of the layers are quite different. The coverage of the √3 Ag/Ge(111) layer is close to 1 ML for all Td studied, unlike √3 Ag/Si(111). where it depends on deposition and annealing conditions.


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