A Honeycomb BeN2 Sheet with a Desirable Direct Band Gap and High Carrier Mobility

2016 ◽  
Vol 7 (14) ◽  
pp. 2664-2670 ◽  
Author(s):  
Cunzhi Zhang ◽  
Qiang Sun
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Valley-selective circular dichroism and high carrier mobility of graphene-like BC6N

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 13179-13186 ◽  
Author(s):  
Xiaobiao Liu ◽  
Xikui Ma ◽  
Han Gao ◽  
Xiaoming Zhang ◽  
Haoqiang Ai ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Band Gap ◽  
Carrier Mobility ◽  
Direct Band Gap ◽  
Black Phosphorene ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Circular Dichroïsm

Graphene-like borocarbonitride (g-BC6N) has a direct-band gap of 1.833 eV, high carrier mobility comparable to that of black phosphorene and a pair of inequivalent valleys with opposite Berry curvatures in K and K′ points.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

scholarly journals TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility

2019 ◽  
Vol 7 (3) ◽  
pp. 639-644 ◽  
Author(s):  
Jun-Hui Yuan ◽  
Alessandro Cresti ◽  
Kan-Hao Xue ◽  
Ya-Qian Song ◽  
Hai-Lei Su ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Monolayer TlP5is predicted to be a direct gap semiconductor with a moderate band gap value of 2.02 eV and balanced high carrier mobilities for both electrons and holes.

Copper(i) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility

2019 ◽  
Vol 4 (1) ◽  
pp. 223-230 ◽  
Author(s):  
Yu Guo ◽  
Qisheng Wu ◽  
Yunhai Li ◽  
Ning Lu ◽  
Keke Mao ◽  
...  
Keyword(s):  
Band Gap ◽  
Oxidation Resistance ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

δ-Cu2S sheets are energetically favorable, and exhibit superior oxidation resistance, suitable direct band gap, and ultrahigh carrier mobility.

A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility

2016 ◽  
Vol 18 (44) ◽  
pp. 30379-30384 ◽  
Author(s):  
Peng-Fei Liu ◽  
Liujiang Zhou ◽  
Thomas Frauenheim ◽  
Li-Ming Wu
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.

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