Metastable Metallic Phase of a Bilayer Blue Phosphorene Induced by Interlayer Bonding and Intralayer Charge Redistributions

2021 ◽  
pp. 10981-10986
Author(s):  
Jeonghwan Ahn ◽  
Iuegyun Hong ◽  
Gwangyoung Lee ◽  
Hyeondeok Shin ◽  
Anouar Benali ◽  
...  
Keyword(s):  
Metallic Phase ◽  
Interlayer Bonding ◽  
Blue Phosphorene

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Metallic phase stabilization and phase diagram of (ET)3(HSO4)2

1991 ◽  
Vol 1 (10) ◽  
pp. 1365-1370 ◽  
Author(s):  
N. D. Kush ◽  
V. N. Laukhin ◽  
A. I. Schegolev ◽  
E. B. Yagubskii ◽  
E. Yu. Alikberova ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Metallic Phase ◽  
Phase Stabilization

DEGREE OF VALENCE MIXING IN THE METALLIC PHASE OF SmS AND IN TmSe

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-267-C4-270 ◽  
Author(s):  
B. BATLOGG ◽  
A. SCHLEGEL ◽  
P. WACHTER
Keyword(s):  
Metallic Phase ◽  
Valence Mixing

Adsorption of nitrogen-based gases on different layers of blue phosphorene oxides

2021 ◽  
Author(s):  
E. A. Zuluaga-Hernandez ◽  
M. E. Mora-Ramos ◽  
E. Flórez ◽  
J. D. Correa
Keyword(s):  
Adsorption Of Nitrogen ◽  
Blue Phosphorene

Blue Phosphorene Nanosheets with Point Defects: Electronic Structure and Hydrogen Storage Capability

2021 ◽  
pp. 149363
Author(s):  
Daughty John ◽  
Bijoy Nharangatt ◽  
Srihari Madhav Kastaur ◽  
Raghu Chatanathodi
Keyword(s):  
Electronic Structure ◽  
Hydrogen Storage ◽  
Point Defects ◽  
Blue Phosphorene

scholarly journals Modulating Blue Phosphorene by Synergetic Codoping: Indirect to Direct Gap Transition and Strong Bandgap Bowing

2021 ◽  
Vol 31 (11) ◽  
pp. 2010893
Author(s):  
Xiaoqing Tian ◽  
Jingyi Duan ◽  
Yadong Wei ◽  
Naixing Feng ◽  
Xiangrong Wang ◽  
...  
Keyword(s):  
Blue Phosphorene

scholarly journals First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Hole Mobility ◽  
Functional Theory ◽  
Mos2 Monolayer ◽  
Naturally Occurring ◽  
Weak Interlayer ◽  
Bulk Structure ◽  
P Type ◽  
Interlayer Bonding

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

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