Fully Boron-Sheet-Based Field Effect Transistors from First-Principles: Inverse Design of Semiconducting Boron Sheets

2020 ◽  
pp. 576-584
Author(s):  
Yi-Lin Zhang ◽  
Ji-Hui Yang ◽  
Hongjun Xiang ◽  
Xin-Gao Gong
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Inverse Design ◽  
Boron Sheets

First principles studies on electronic and contact properties of Single layer 2H-MoS2/1T'-MX2 heterojunctions

2022 ◽  
Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Transition Metal Chalcogenides

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...

scholarly journals First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials

Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19390-19397 ◽  
Author(s):  
E. G. Marin ◽  
D. Marian ◽  
G. Iannaccone ◽  
G. Fiori
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
One Dimensional ◽  
Two Dimensional Materials ◽  
Tunnel Fets

We explore nanoribbons from topological two-dimensional stanene as a channel material in tunnel field effect transistors, opening the possibility of building pure one-dimensional channel devices.

scholarly journals Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

2016 ◽  
Vol 113 (31) ◽  
pp. 8583-8588 ◽  
Author(s):  
Di Wu ◽  
Xiao Li ◽  
Lan Luan ◽  
Xiaoyu Wu ◽  
Wei Li ◽  
...  
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Edge States ◽  
First Principles Calculations ◽  
Future Improvement ◽  
Metal Dichalcogenides ◽  
Disorder Potential ◽  
2D Crystals

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

Semiconducting α'−boron sheet with high mobility and low all-boron contact resistance: A first-principles study

Nanoscale ◽  
2021 ◽  
Author(s):  
Jun-Jie Zhang ◽  
Tariq Altalhi ◽  
Jihui Yang ◽  
Boris I Yakobson
Keyword(s):  
Contact Resistance ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
First Principles Study ◽  
Metallic Electrodes

Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics....

Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling

2007 ◽  
Vol 91 (2) ◽  
pp. 023506 ◽  
Author(s):  
G. Pourtois ◽  
M. Houssa ◽  
B. De Jaeger ◽  
B. Kaczer ◽  
F. Leys ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Simulator Acceleration and Inverse Design of Fin Field-Effect Transistors Using Machine Learning

2021 ◽  
Author(s):  
Insoo Kim ◽  
So Jeong Park ◽  
Changwook Jeong ◽  
Munbo Shim ◽  
Dae Sin Kim ◽  
...  
Keyword(s):  
Machine Learning ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Electronic Devices ◽  
Efficient Solutions ◽  
Inverse Design ◽  
Design Parameters ◽  
Learning Approaches ◽  
Design Problems

Abstract The simulation and design of electronic devices such as transistors is vital for the semiconductor industry. Conventionally, a device is intuitively designed and simulated using model equations, which is a time-consuming and expensive process. However, recent machine learning approaches provide an unprecedented opportunity to improve these tasks by training the underlying relationships between the device design and the specifications derived from the extensively accumulated simulation data. This study implements various machine learning approaches for the simulation acceleration and inverse-design problems of fin field-effect transistors. In comparison to traditional simulators, the proposed neural network model demonstrated almost equivalent results (R2 = 0.99) and was more than 122,000 times faster in simulation. Moreover, the proposed inverse-design model successfully generated design parameters that satisfied the desired target specifications with high accuracies (R2 = 0.96). Overall, the results demonstrated that the proposed machine learning models aided in achieving efficient solutions for the simulation and design problems pertaining to electronic devices. Thus, the proposed approach can be further extended to more complex devices and other vital processes in the semiconductor industry.

Importance of SiC Stacking to Interlayer States at the SiC/SiO2 Interface

2016 ◽  
Vol 858 ◽  
pp. 457-460
Author(s):  
Christopher James Kirkham ◽  
Tomoya Ono
Keyword(s):  
Electronic Structure ◽  
Conduction Band ◽  
First Principles ◽  
Local Structure ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
First Principles Calculations

We investigated the effect of SiC stacking on the 4H-SiC/SiO2 interface via first principles calculations. Interlayer states are observed along the SiC conduction band edge, and are affected by the local structure at the interface. The location of these states changes depending on which of two lattice sites, h or k is at the interface. This difference is important for SiC based metal-oxide-semiconductor field-effect transistors which rely on the electronic structure of the conduction band.

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