scholarly journals First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials

Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19390-19397 ◽  
Author(s):  
E. G. Marin ◽  
D. Marian ◽  
G. Iannaccone ◽  
G. Fiori
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
One Dimensional ◽  
Two Dimensional Materials ◽  
Tunnel Fets

We explore nanoribbons from topological two-dimensional stanene as a channel material in tunnel field effect transistors, opening the possibility of building pure one-dimensional channel devices.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

First principles studies on electronic and contact properties of Single layer 2H-MoS2/1T'-MX2 heterojunctions

2022 ◽  
Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Transition Metal Chalcogenides

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...

scholarly journals Ambipolar transport compact models for two-dimensional materials based field-effect transistors

2021 ◽  
Vol 26 (5) ◽  
pp. 574-591
Author(s):  
Zhaoyi Yan ◽  
Guangyang Gou ◽  
Jie Ren ◽  
Fan Wu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Compact Models ◽  
Ambipolar Transport

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

2021 ◽  
Vol 3 (9) ◽  
pp. 4126-4134
Author(s):  
Aroop K. Behera ◽  
Charles Thomas Harris ◽  
Douglas V. Pete ◽  
Collin J. Delker ◽  
Per Erik Vullum ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electrical Contacts ◽  
Two Dimensional ◽  
One Dimensional ◽  
Heterostructure Field Effect Transistors

B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Planar Lattice ◽  
Direct Band Gap ◽  
Two Dimensional Materials ◽  
Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

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