Efficient Electronic Coupling in Perylenediimide Multilayered Films on Indium Tin Oxide

2020 ◽  
Vol 124 (10) ◽  
pp. 5541-5551
Author(s):  
Barbara P. G. Silva ◽  
Bruna Tosco ◽  
Daniel Z. de Florio ◽  
Vladimir Stepanenko ◽  
Frank Würthner ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Coupling ◽  
Multilayered Films

Influence of temperature annealing on optical properties of SrTiO3/BaTiO3 multilayered films on indium tin oxide

2010 ◽  
Vol 256 (14) ◽  
pp. 4462-4467 ◽  
Author(s):  
T. Supasai ◽  
S. Dangtip ◽  
P. Learngarunsri ◽  
N. Boonyopakorn ◽  
A. Wisitsoraat ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Multilayered Films ◽  
Influence Of Temperature

scholarly journals Nanoscale morphology and electronic coupling at the interface between indium tin oxide and organic molecular materials

Nanoscale ◽  
2018 ◽  
Vol 10 (19) ◽  
pp. 9376-9385 ◽  
Author(s):  
Andrea Lorenzoni ◽  
Adriano Mosca Conte ◽  
Alessandro Pecchia ◽  
Francesco Mercuri
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Computational Approach ◽  
Electronic Coupling ◽  
Molecular Materials ◽  
Nanoscale Morphology ◽  
Injection Rates

An integrated computational approach, coupling nanoscale morphology to charge transport properties, allows to evaluate the distribution of injection rates at the electrode/organic interface in OLED materials.

Fan-shaped mid-infrared chiral metamaterials based on indium tin oxide and their circular dichroism

2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Mid Infrared ◽  
Chiral Metamaterials ◽  
Circular Dichroïsm

Indium tin oxide/GaAs photodiodes for millimetric-wave applications

1986 ◽  
Vol 22 (23) ◽  
pp. 1266 ◽  
Author(s):  
D.G. Parker ◽  
P.G. Say
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Millimetric Wave

Indium–tin oxide film electrode as catalytic amperometric sensor for hydrogen peroxide

The Analyst ◽  
1995 ◽  
Vol 120 (10) ◽  
pp. 2579-2583 ◽  
Author(s):  
Xiaohua Cai ◽  
Božidar Ogorevc ◽  
Gabrijela Tavčar ◽  
Joseph Wang
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amperometric Sensor ◽  
Film Electrode

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films

scholarly journals Optoelectronic Properties of Ultrathin Indium Tin Oxide Films: A First-Principle Study

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 30
Author(s):  
Xiaoyan Liu ◽  
Lei Wang ◽  
Yi Tong
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Density Functional ◽  
Optoelectronic Properties ◽  
Surface Strain ◽  
Strain Effect ◽  
First Principle ◽  
Electrical Resistivities ◽  
Ito Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

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