Energy-Temporal Pathways of Free-Charge Formation at Organic Bilayers: Competition of Delocalization, Disorder, and Polaronic Effects

2020 ◽  
Vol 124 (8) ◽  
pp. 4378-4392
Author(s):  
Veljko Janković ◽  
Nenad Vukmirović
Keyword(s):  
Free Charge ◽  
Charge Formation

Space Charge Formation by Irradiation of Visible Light in Polyimide under DC Electric Stress

2009 ◽  
Vol 129 (7) ◽  
pp. 463-469 ◽  
Author(s):  
Tomo Tadokoro ◽  
Takuo Motoyama ◽  
Hiroshi Harada ◽  
Yasuhiro Tanaka ◽  
Tastuo Takada ◽  
...  
Keyword(s):  
Visible Light ◽  
Space Charge ◽  
Charge Formation ◽  
Electric Stress

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

The interasin raw material base of coke-chemical production of Ukraine: Problems of charge formation, its preparation and coking

2018 ◽  
Vol 5 (6) ◽  
pp. 3-7 ◽  
Author(s):  
E.S. Popov ◽  
V.I. Gavrilyuk ◽  
N.V. Mukina ◽  
E.T. Kovalev ◽  
I.D. Drozdnik ◽  
...  
Keyword(s):  
Raw Material ◽  
Material Base ◽  
Chemical Production ◽  
Charge Formation

Additive-induced Miscibility Regulation and Hierarchical Morphology Enables 17.5% Binary Organic Solar Cells

2021 ◽  
Author(s):  
Jie Lv ◽  
Hua Tang ◽  
Jiaming Huang ◽  
Cenqi Yan ◽  
Kuan Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Power Conversion ◽  
Charge Trapping ◽  
Free Charge ◽  
Charge Generation ◽  
Low Charge ◽  
Hierarchical Morphology

Due to the barrierless free charge generation, low charge trapping, and high charge mobilities, the PM6:Y6 organic solar cell (OSC) achieves excellent power conversion efficiency (PCE) of 15.7%. However, the...

scholarly journals Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation

2021 ◽  
Vol 11 (4) ◽  
pp. 1891
Author(s):  
Vallery Stanishev ◽  
Nerijus Armakavicius ◽  
Chamseddine Bouhafs ◽  
Camilla Coletti ◽  
Philipp Kühne ◽  
...  
Keyword(s):  
High Temperature ◽  
Charge Carrier ◽  
Buffer Layer ◽  
Free Charge Carrier ◽  
Monolayer Graphene ◽  
Free Charge ◽  
Layer Formation ◽  
Free Hole ◽  
Sublimation Growth ◽  
Insulating Substrates

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ∘C, and which is found to be independent of TAr. Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

Dielectric relaxation of free charge carriers in some fluorite-type solid solutions

1998 ◽  
Vol 244 ◽  
pp. 201-206 ◽  
Author(s):  
E.F. Hairetdinov ◽  
N.F. Uvarov ◽  
J.-M. Reau ◽  
P. Hagenmuller
Keyword(s):  
Dielectric Relaxation ◽  
Solid Solutions ◽  
Charge Carriers ◽  
Free Charge ◽  
Fluorite Type

Unraveling the Temperature Dependence of Exciton Dissociation and Free Charge Generation in Nonfullerene Organic Solar Cells

Solar RRL ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 2000789
Author(s):  
Chao Ma ◽  
Christopher C. S. Chan ◽  
Xinhui Zou ◽  
Han Yu ◽  
Jianquan Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Organic Solar Cells ◽  
Free Charge ◽  
Exciton Dissociation ◽  
Charge Generation

Charge Transport and Space-Charge Formation in Cd1−xZnxTe1−ySey Radiation Detectors

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
J. Pipek ◽  
M. Betušiak ◽  
E. Belas ◽  
R. Grill ◽  
P. Praus ◽  
...  
Keyword(s):  
Space Charge ◽  
Charge Transport ◽  
Radiation Detectors ◽  
Charge Formation

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

2021 ◽  
Vol 118 (25) ◽  
pp. 252101
Author(s):  
Takeyoshi Onuma ◽  
Kohei Sasaki ◽  
Tomohiro Yamaguchi ◽  
Tohru Honda ◽  
Akito Kuramata ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Free Charge Carrier ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Free Charge ◽  
Homoepitaxial Film

Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940030 ◽  
Author(s):  
A. I. Efimova ◽  
E. A. Lipkova ◽  
K. A. Gonchar ◽  
A. A. Eliseev ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Attenuated Total Reflection ◽  
Free Charge ◽  
Cross Sectional ◽  
Text Type ◽  
Cross Sectional Size ◽  
Potential Applications

Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100[Formula: see text]nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped [Formula: see text]-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermoactivated diffusion of boron at 900–1000∘C. The latter process was found to increase the concentration of free holes in SiNWs up to [Formula: see text][Formula: see text]cm[Formula: see text]. Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.

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